型号 功能描述 生产厂家&企业 LOGO 操作
IDT70V261S

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:153.8 Kbytes Page:17 Pages

IDT

IDT70V261S

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:338.47 Kbytes Page:17 Pages

IDT

IDT70V261S

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:190.58 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:338.47 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:190.58 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:153.8 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:153.8 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:153.8 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:153.8 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:153.8 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:153.8 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

文件:153.8 Kbytes Page:17 Pages

IDT

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

Features ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location ◆ High-speed access – Commercial: 25/35ns (max.) – Industrial: 25ns (max.) ◆ Low-power operation – IDT70V261S Active: 300mW (typ.) Standby: 3.3mW (typ.) – IDT70V261L Active: 300mW (typ.)

RENESAS

瑞萨

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

Features ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location ◆ High-speed access – Commercial: 25/35ns (max.) – Industrial: 25ns (max.) ◆ Low-power operation – IDT70V261S Active: 300mW (typ.) Standby: 3.3mW (typ.) – IDT70V261L Active: 300mW (typ.)

RENESAS

瑞萨

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

Features ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location ◆ High-speed access – Commercial: 25/35ns (max.) – Industrial: 25ns (max.) ◆ Low-power operation – IDT70V261S Active: 300mW (typ.) Standby: 3.3mW (typ.) – IDT70V261L Active: 300mW (typ.)

RENESAS

瑞萨

IDT70V261S产品属性

  • 类型

    描述

  • 型号

    IDT70V261S

  • 功能描述

    IC SRAM 256KBIT 25NS 100TQFP

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    1,000

  • 系列

    - 格式 -

  • 存储器

    RAM

  • 存储器类型

    SRAM - 双端口,同步

  • 存储容量

    1.125M(32K x 36)

  • 速度

    5ns

  • 接口

    并联

  • 电源电压

    3.15 V ~ 3.45 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    256-LBGA

  • 供应商设备封装

    256-CABGA(17x17)

  • 包装

    带卷(TR)

  • 其它名称

    70V3579S5BCI8

更新时间:2025-8-11 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IDT
24+
NA/
3310
原装现货,当天可交货,原型号开票
IDT
25+
TQFP100
65248
百分百原装现货 实单必成
IDT
2023+
QFP
50000
原装现货
IDT
2018+
QFP
6528
承若只做进口原装正品假一赔十!
IDT
23+
TQFP100
6800
专注配单,只做原装进口现货
IDT
21+
QFP
1062
只做原装正品,不止网上数量,欢迎电话微信查询!
IDT
2021+
TQFP100
2203
十年专营原装现货,假一赔十
IDT
24+
TQFP100
12000
原装正品 有挂就有货
IDT
20+
QFP
500
样品可出,优势库存欢迎实单
IDT
25+
TQFP100
13800
原装,请咨询

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