650V SiC thinQ!??Generation 5 diodes

Features ■ V₂ at 650V Improved Figure of Merit (Q x V) ■ No reverse recovery charge ■ Soft switching reverse recovery waveform ■ Temperature independent switching behavior High operating temperature (₁175°C) ■ Improved surge capability ■ Pb-free lead plating ☐10 years manufacturing of

Silicon Carbide Diode

文件：727.29 Kbytes Page：11 Pages

采用 real2pin 封装的 650 V 碳化硅肖特基二极管

Silicon Carbide Diode

文件：727.29 Kbytes Page：11 Pages

封装/外壳：4-PowerTSFN 包装：散装 描述：DIODE SCHOTTKY 650V 6A VSON-4 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：4-PowerTSFN 包装：管件 描述：DIODE SCHOTTKY 650V 6A VSON-4 分立半导体产品 二极管 - 整流器 - 单

650V SiC thinQ!??Generation 5 diodes

Features ■ V₂ at 650V Improved Figure of Merit (Q x V) ■ No reverse recovery charge ■ Soft switching reverse recovery waveform ■ Temperature independent switching behavior High operating temperature (₁175°C) ■ Improved surge capability ■ Pb-free lead plating ☐10 years manufacturing of

650V SiC thinQ!??Generation 5 diodes

Features ■ V₂ at 650V Improved Figure of Merit (Q x V) ■ No reverse recovery charge ■ Soft switching reverse recovery waveform ■ Temperature independent switching behavior High operating temperature (₁175°C) ■ Improved surge capability ■ Pb-free lead plating ☐10 years manufacturing of

Silicon Carbide Diode

文件：1.16193 Mbytes Page：11 Pages