650V SiC thinQ!??Generation 5 diodes

Features ■ V₂ at 650V Improved Figure of Merit (Q x V) ■ No reverse recovery charge ■ Soft switching reverse recovery waveform ■ Temperature independent switching behavior High operating temperature (₁175°C) ■ Improved surge capability ■ Pb-free lead plating ☐10 years manufacturing of

ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

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封装/外壳：TO-220-2 包装：散装 描述：DIODE SCHOTTKY 650V 8A TO220-2 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：TO-220-2 包装：管件 描述：DIODE SCHOTTKY 650V 8A TO220-2-1 分立半导体产品 二极管 - 整流器 - 单

650V SiC thinQ!??Generation 5 diodes

Features ■ V₂ at 650V Improved Figure of Merit (Q x V) ■ No reverse recovery charge ■ Soft switching reverse recovery waveform ■ Temperature independent switching behavior High operating temperature (₁175°C) ■ Improved surge capability ■ Pb-free lead plating ☐10 years manufacturing of

650V SiC thinQ!??Generation 5 diodes

Features ■ V₂ at 650V Improved Figure of Merit (Q x V) ■ No reverse recovery charge ■ Soft switching reverse recovery waveform ■ Temperature independent switching behavior High operating temperature (₁175°C) ■ Improved surge capability ■ Pb-free lead plating ☐10 years manufacturing of

Silicon Carbide Diode

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Silicon Carbide Diode

文件：735.17 Kbytes Page：11 Pages