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IDC08S60C

2nd generation thinQ SiC Schottky Diode

FEATURES: • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switchin behavior • No forward recovery • High surge current capability Applications: • SMPS, PFC, snubber

INFINEON

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IDC08S60C

2nd generation thinQ SiC Schottky Diode

INFINEON

英飞凌

Chip Diode

Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled D ·Revolutionary semiconductor material - silicon carbide\n ·Switching behaviour benchmark\n ·No Reverse Recovery / no forward recovery\n ·Temperature independent switching behaviour\n ·Qualified according to JEDEC based on target applications;

INFINEON

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2nd generation thinQ!TM SiC Schottky Diode

2nd generation thinQ!™ SiC Schottky Diode Features: ● Revolutionary Semiconductor Material - Silicon Carbide ● Switching Behaviour Benchmark ● No Reverse Recovery / No Forward Recovery ● Temperature Independent Switching Behaviour ● Qualified According to JEDEC1) Based on Tar

INFINEON

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封装/外壳:模具 包装:散装 描述:DIODE SIC 600V 8A SAWN WAFER 分立半导体产品 二极管 - 整流器 - 单

INFINEON

英飞凌

封装/外壳:模具 包装:散装 描述:DIODE GEN PURPOSE SAWN WAFER 分立半导体产品 二极管 - 整流器 - 单

INFINEON

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Stealth 2 Rectifier

The FFP08S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low

FAIRCHILD

仙童半导体

Stealth 2 Rectifier

The FFP08S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low

FAIRCHILD

仙童半导体

2nd Generation thinQ SiC Schottky Diode

文件:231.52 Kbytes Page:7 Pages

INFINEON

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Thinq SiC Schottky Diode

文件:207.21 Kbytes Page:8 Pages

INFINEON

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IDC08S60C产品属性

  • 类型

    描述

  • VDS max:

    600.0V

  • IF max:

    8.0A

  • I(FSM) max:

    59.0A

  • VF :

    1.5V 

  • IR max:

    100.0µA

更新时间:2026-7-31 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
23+
8000
只做原装现货
INFINEON
23+
7000
朴熙
24+
con
10000
查现货到京北通宇商城
中性
针座6P的2*3的间距2.54MM
50000
Infineon
25+
电联咨询
7800
公司现货,提供拆样技术支持
Infineon Technologies
25+
模具
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
INFINEON
25+
模具
3000
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