| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IDC08S60C | 2nd generation thinQ SiC Schottky Diode FEATURES: • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switchin behavior • No forward recovery • High surge current capability Applications: • SMPS, PFC, snubber | INFINEON 英飞凌 | ||
IDC08S60C | 2nd generation thinQ SiC Schottky Diode | INFINEON 英飞凌 | ||
Chip Diode Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled D ·Revolutionary semiconductor material - silicon carbide\n ·Switching behaviour benchmark\n ·No Reverse Recovery / no forward recovery\n ·Temperature independent switching behaviour\n ·Qualified according to JEDEC based on target applications; | INFINEON 英飞凌 | |||
2nd generation thinQ!TM SiC Schottky Diode 2nd generation thinQ!™ SiC Schottky Diode Features: ● Revolutionary Semiconductor Material - Silicon Carbide ● Switching Behaviour Benchmark ● No Reverse Recovery / No Forward Recovery ● Temperature Independent Switching Behaviour ● Qualified According to JEDEC1) Based on Tar | INFINEON 英飞凌 | |||
封装/外壳:模具 包装:散装 描述:DIODE SIC 600V 8A SAWN WAFER 分立半导体产品 二极管 - 整流器 - 单 | INFINEON 英飞凌 | |||
封装/外壳:模具 包装:散装 描述:DIODE GEN PURPOSE SAWN WAFER 分立半导体产品 二极管 - 整流器 - 单 | INFINEON 英飞凌 | |||
Stealth 2 Rectifier The FFP08S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low | FAIRCHILD 仙童半导体 | |||
Stealth 2 Rectifier The FFP08S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low | FAIRCHILD 仙童半导体 | |||
2nd Generation thinQ SiC Schottky Diode 文件:231.52 Kbytes Page:7 Pages | INFINEON 英飞凌 | |||
Thinq SiC Schottky Diode 文件:207.21 Kbytes Page:8 Pages | INFINEON 英飞凌 |
IDC08S60C产品属性
- 类型
描述
- VDS max:
600.0V
- IF max:
8.0A
- I(FSM) max:
59.0A
- VF :
1.5V
- IR max:
100.0µA
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
8000 |
只做原装现货 |
||||
INFINEON |
23+ |
7000 |
|||||
朴熙 |
24+ |
con |
10000 |
查现货到京北通宇商城 |
|||
中性 |
针座6P的2*3的间距2.54MM |
50000 |
|||||
Infineon |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
Infineon Technologies |
25+ |
模具 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
INFINEON |
25+ |
模具 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
IDC08S60C规格书下载地址
IDC08S60C参数引脚图相关
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IDC08S60C数据表相关新闻
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DdatasheetPDF页码索引
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