Thinq SiC Schottky Diode

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Silicon Carbide Schottky Diode

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封装/外壳：TO-220-2 包装：卷带（TR） 描述：DIODE SCHOTTKY 600V 8A TO220-2 分立半导体产品 二极管 - 整流器 - 单

Thinq SiC Schottky Diode

Silicon Carbide Schottky Diode

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Stealth 2 Rectifier

The FFP08S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low

Stealth 2 Rectifier

The FFP08S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low

2nd generation thinQ SiC Schottky Diode

FEATURES: • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switchin behavior • No forward recovery • High surge current capability Applications: • SMPS, PFC, snubber

2nd Generation thinQ SiC Schottky Diode

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