Timing Generator for Frame Readout CCD Image Sensor

Description The CXD2498R is a timing generator IC which generates the timing pulses for performing frame readout using the ICX282 CCD image sensor. Features • Base oscillation frequency 45MHz • Electronic shutter function • Supports various drive modes such as draft and AF mode

Timing Generator for Frame Readout CCD Image Sensor

Diagonal 11mm (Type 2/3) Frame Readout CCD Image Sensor with Square Pixel for Color Cameras

Description\nThe ICX282AKF is a diagonal 11mm (Type 2/3) interline CCD solid-state image sensor with a square pixel array and 5.07M effective pixels. Frame readout allows all pixels' signals to be output independently within approximately 1/3.75 second. In addition, output is possible using various • High horizontal and vertical resolution\n• Supports 10 types of readout modes\n  Frame readout mode, 2× speed mode \n, 2× speed mode (2), 8× speed mode, center scan mode \n, center scan mode (2), center scan mode (3), center scan mode (4), AF mode \n, AF mode (2)\n• Square pixel\n• Horizontal driv;

Diagonal 11mm (Type 2/3) Frame Readout CCD Image Sensor with Square Pixel for Color Cameras

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Diagonal 11mm (Type 2/3) Frame Readout CCD Image Sensor with Square Pixel for Color Cameras

文件：526.04 Kbytes Page：48 Pages

Diagonal 11mm (Type 2/3) Frame Readout CCD Image Sensor with Square Pixel for Color Cameras

文件：529.86 Kbytes Page：48 Pages

Diagonal 11mm (Type 2/3) Frame Readout CCD Image Sensor with Square Pixel for Color Cameras

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

Silicon NPN Transistor Final RF Power Amp, Switch

Applications: • HF Power Amplifiers, Switchings • 27MHz, 4W, AM, Citizens Band Transmitter Output Stage

Round.Top View Type

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