丝印代码：I282A；INA28x High-Accuracy, Wide Common-Mode Range, Bidirectional Current Shunt Monitors, Zero-Drift Series

1 Features 1• Wide Common-Mode Range: –14 V to +80 V • Offset Voltage: ±20 μV • CMRR: 140 dB • Accuracy: – ±1.4% Gain Error (Max) – 0.3 μV/°C Offset Drift – 0.005%/°C Gain Drift (Max) • Available Gains: – 50 V/V: INA282 – 100 V/V: INA286 – 200 V/V: INA283 – 500 V/V: INA284 – 1

丝印代码：I282A；INA28x High-Accuracy, Wide Common-Mode Range, Bidirectional Current Shunt Monitors, Zero-Drift Series

1 Features 1• Wide Common-Mode Range: –14 V to +80 V • Offset Voltage: ±20 μV • CMRR: 140 dB • Accuracy: – ±1.4% Gain Error (Max) – 0.3 μV/°C Offset Drift – 0.005%/°C Gain Drift (Max) • Available Gains: – 50 V/V: INA282 – 100 V/V: INA286 – 200 V/V: INA283 – 500 V/V: INA284 – 1

丝印代码：I282A；INA28x High-Accuracy, Wide Common-Mode Range, Bidirectional Current Shunt Monitors, Zero-Drift Series

1 Features 1• Wide Common-Mode Range: –14 V to +80 V • Offset Voltage: ±20 μV • CMRR: 140 dB • Accuracy: – ±1.4% Gain Error (Max) – 0.3 μV/°C Offset Drift – 0.005%/°C Gain Drift (Max) • Available Gains: – 50 V/V: INA282 – 100 V/V: INA286 – 200 V/V: INA283 – 500 V/V: INA284 – 1

丝印代码：I282A；INA28x High-Accuracy, Wide Common-Mode Range, Bidirectional Current Shunt Monitors, Zero-Drift Series

1 Features 1• Wide Common-Mode Range: –14 V to +80 V • Offset Voltage: ±20 μV • CMRR: 140 dB • Accuracy: – ±1.4% Gain Error (Max) – 0.3 μV/°C Offset Drift – 0.005%/°C Gain Drift (Max) • Available Gains: – 50 V/V: INA282 – 100 V/V: INA286 – 200 V/V: INA283 – 500 V/V: INA284 – 1

丝印代码：I282A；INA28x High-Accuracy, Wide Common-Mode Range, Bidirectional Current Shunt Monitors, Zero-Drift Series

1 Features 1• Wide Common-Mode Range: –14 V to +80 V • Offset Voltage: ±20 μV • CMRR: 140 dB • Accuracy: – ±1.4% Gain Error (Max) – 0.3 μV/°C Offset Drift – 0.005%/°C Gain Drift (Max) • Available Gains: – 50 V/V: INA282 – 100 V/V: INA286 – 200 V/V: INA283 – 500 V/V: INA284 – 1

丝印代码：I282A；INA28x High-Accuracy, Wide Common-Mode Range, Bidirectional Current Shunt Monitors, Zero-Drift Series

1 Features 1• Wide Common-Mode Range: –14 V to +80 V • Offset Voltage: ±20 μV • CMRR: 140 dB • Accuracy: – ±1.4% Gain Error (Max) – 0.3 μV/°C Offset Drift – 0.005%/°C Gain Drift (Max) • Available Gains: – 50 V/V: INA282 – 100 V/V: INA286 – 200 V/V: INA283 – 500 V/V: INA284 – 1

丝印代码：I282A；INA28x High-Accuracy, Wide Common-Mode Range, Bidirectional Current Shunt Monitors, Zero-Drift Series

1 Features 1• Wide Common-Mode Range: –14 V to +80 V • Offset Voltage: ±20 μV • CMRR: 140 dB • Accuracy: – ±1.4% Gain Error (Max) – 0.3 μV/°C Offset Drift – 0.005%/°C Gain Drift (Max) • Available Gains: – 50 V/V: INA282 – 100 V/V: INA286 – 200 V/V: INA283 – 500 V/V: INA284 – 1

丝印代码：I282A；INA28x High-Accuracy, Wide Common-Mode Range, Bidirectional Current Shunt Monitors, Zero-Drift Series

1 Features 1• Wide Common-Mode Range: –14 V to +80 V • Offset Voltage: ±20 μV • CMRR: 140 dB • Accuracy: – ±1.4% Gain Error (Max) – 0.3 μV/°C Offset Drift – 0.005%/°C Gain Drift (Max) • Available Gains: – 50 V/V: INA282 – 100 V/V: INA286 – 200 V/V: INA283 – 500 V/V: INA284 – 1

丝印代码：I282A；INA28x High-Accuracy, Wide Common-Mode Range, Bidirectional Current Shunt Monitors, Zero-Drift Series

1 Features 1• Wide Common-Mode Range: –14 V to +80 V • Offset Voltage: ±20 μV • CMRR: 140 dB • Accuracy: – ±1.4% Gain Error (Max) – 0.3 μV/°C Offset Drift – 0.005%/°C Gain Drift (Max) • Available Gains: – 50 V/V: INA282 – 100 V/V: INA286 – 200 V/V: INA283 – 500 V/V: INA284 – 1

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

Silicon NPN Transistor Final RF Power Amp, Switch

Applications: • HF Power Amplifiers, Switchings • 27MHz, 4W, AM, Citizens Band Transmitter Output Stage

Round.Top View Type

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