Description

The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C.

Features

• 24A, 600V at TC = 25°C

• 600V Switching SOA Capability

• Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150°C

• Short Circuit Rating

• Low Conduction Loss