This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188.

Features

• 24A, 600V at TC = 25°C

• Typical Fall Time at TJ = 150°C . . . . . . . . . . . . . . . . 210ns

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode