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型号	功能描述	生产厂家企业	LOGO
HY62CT08081E	32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha	Hynix 海力士	Hynix
HY62CT08081E	32Kx8bit CMOS SRAM	Hynix 海力士	Hynix
HY62CT08081E-C	32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha	Hynix 海力士	Hynix
HY62CT08081E-DGC	32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha	Hynix 海力士	Hynix
HY62CT08081E-DGE	32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha	Hynix 海力士	Hynix
HY62CT08081E-DGI	32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha	Hynix 海力士	Hynix
HY62CT08081E-DPC	32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha	Hynix 海力士	Hynix
HY62CT08081E-DPE	32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha	Hynix 海力士	Hynix
HY62CT08081E-DPI	32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha	Hynix 海力士	Hynix
HY62CT08081E-DTC	32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha	Hynix 海力士	Hynix
HY62CT08081E-DTE	32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha	Hynix 海力士	Hynix
HY62CT08081E-DTI	32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha	Hynix 海力士	Hynix
HY62CT08081E-E	32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha	Hynix 海力士	Hynix
HY62CT08081E-I	32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha	Hynix 海力士	Hynix
HY62CT08081E-C	32Kx8bit CMOS SRAM	Hynix 海力士	Hynix

HY62CT08081E产品属性

类型
描述
型号
HY62CT08081E
制造商
HYNIX
制造商全称
Hynix Semiconductor
功能描述
32Kx8bit CMOS SRAM

HY62CT08081E供应商更多...

更新时间：2025-10-1 9:48:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市威尔健半导体有限公司	HY62CT08081E-DP70C	HY	23+	DIP	50000	全新原装正品现货,支持订货	询价
深圳市金华微盛电子有限公司	HY62CT08081E	HY	19+	DIP	19175		询价
深圳市富芯乐电子科技有限公司	HY62CT08081E-DP70C	HY	24+	DIP	2000	只做原装正品现货欢迎来电查询15919825718	询价
贸泽芯城（深圳）电子科技有限公司	HY62CT08081E-DG55I	HYNIX/海力士	23+	SOP28	3971	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市赛美科科技有限公司	HY62CT08081E-DP70C	HYNIX		DIP	68500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市能元时代电子有限公司	HY62CT08081E-DP70C	HY	23+	DIP	35084	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
深圳市恒达亿科技有限公司	HY62CT08081E-DP70C	HY	25+	SOP	3200	全新原装、诚信经营、公司现货销售	询价
上海凌岳电子科技有限公司（上海涵恩科技）	HY62CT08081E-DP7C	HYNIX	2023+		3000	进口原装现货	询价
深圳市安富世纪电子有限公司	HY62CT08081E-DP70C	HY	23+	DIP	6612	全新原装正品现货,支持订货	询价
深圳市欧立现代科技有限公司	HY62CT08081EDP70C	HY	24+	原装	6980	原装现货,可开13%税票	询价

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HY62CT08081E规格书下载地址

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HYG260P03LR1S
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HY62CT08081E产品属性

HY62CT08081E供应商更多...

HY62CT08081E芯片相关品牌

HY62CT08081E规格书下载地址

HY62CT08081E参数引脚图相关

HY62CT08081E数据表相关新闻

HYM8563T CMOS实时时钟芯片

HY628400LG-70

HY628100A，HY628100ALG-70，HY628100B，HY628100BLLG55

HY604808

HY681690

HYG260P03LR1S

DdatasheetPDF页码索引