位置：首页 > IC中文资料第6369页 > HY62CT08081E
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HY62CT08081E | 32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha | HynixHynix Semiconductor 海力士海力士半导体 |  |   |
32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha | HynixHynix Semiconductor 海力士海力士半导体 | | | |
32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha | HynixHynix Semiconductor 海力士海力士半导体 | | | |
32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha | HynixHynix Semiconductor 海力士海力士半导体 | | | |
32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha | HynixHynix Semiconductor 海力士海力士半导体 | | | |
32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha | HynixHynix Semiconductor 海力士海力士半导体 | | | |
32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha | HynixHynix Semiconductor 海力士海力士半导体 | | | |
32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha | HynixHynix Semiconductor 海力士海力士半导体 | | | |
32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha | HynixHynix Semiconductor 海力士海力士半导体 | | | |
32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha | HynixHynix Semiconductor 海力士海力士半导体 | | | |
32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha | HynixHynix Semiconductor 海力士海力士半导体 | | | |
32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha | HynixHynix Semiconductor 海力士海力士半导体 | | | |
32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha | HynixHynix Semiconductor 海力士海力士半导体 | | |
HY62CT08081E产品属性
- 类型
描述
- 型号
HY62CT08081E
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
32Kx8bit CMOS SRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HY |
24+ |
NA/ |
3320 |
原装现货,当天可交货,原型号开票 |
|||
STMicroelectronics |
23+ |
PLCC |
6500 |
全新原装假一赔十 |
|||
HYNIX |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|||
HY |
0350+ |
DIP |
350 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HY |
24+ |
DIP |
450 |
原装现货假一赔十 |
|||
HY |
24+ |
原装 |
6980 |
原装现货,可开13%税票 |
|||
HY |
24+ |
DIP |
2000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
HY |
21+ |
DIP |
12588 |
原装正品,自己库存 假一罚十 |
|||
HYNIX |
22+ |
SOP |
8000 |
原装正品支持实单 |
|||
HY |
25+ |
SOP |
3200 |
全新原装、诚信经营、公司现货销售 |
HY62CT08081E芯片相关品牌
HY62CT08081E规格书下载地址
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HY62CT08081E数据表相关新闻
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2019-3-1
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