型号 功能描述 生产厂家&企业 LOGO 操作
HY62CT08081E-I

32Kx8bit CMOS SRAM

DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha

HynixHynix Semiconductor

海力士海力士半导体

Hynix

32Kx8bit CMOS SRAM

DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha

HynixHynix Semiconductor

海力士海力士半导体

Hynix

32Kx8bit CMOS SRAM

DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha

HynixHynix Semiconductor

海力士海力士半导体

Hynix

32Kx8bit CMOS SRAM

DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha

HynixHynix Semiconductor

海力士海力士半导体

Hynix

32Kx8bit CMOS SRAM

DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha

HynixHynix Semiconductor

海力士海力士半导体

Hynix

32Kx8bit CMOS SRAM

DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha

HynixHynix Semiconductor

海力士海力士半导体

Hynix

HY62CT08081E-I产品属性

  • 类型

    描述

  • 型号

    HY62CT08081E-I

  • 制造商

    HYNIX

  • 制造商全称

    Hynix Semiconductor

  • 功能描述

    32Kx8bit CMOS SRAM

更新时间:2025-8-6 10:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HYNIX
23+
DIP
8560
受权代理!全新原装现货特价热卖!
HYNIX
1836+
SOP28
9852
只做原装正品现货!或订货假一赔十!
HY
03+
DIP28
1000
全新原装现货特价!
HYNIX
2025+
WSOP
3557
全新原厂原装产品、公司现货销售
HYINK
24+
TSOP
2679
原装优势!绝对公司现货!可长期供货!
HYNIX/海力士
1824+
DIP
2701
原装现货专业代理,可以代拷程序
HYNIX
24+
DIP
5000
全现原装公司现货
HYNIX/海力士
21+
DIP-28
10000
原装现货假一罚十
HY
24+
SOP28
6800
绝对原装!真实库存!
NYNIX
16+
NA
8800
原装现货,货真价优

HY62CT08081E-I芯片相关品牌

  • ANALOGICTECH
  • ASTRODYNE
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  • DSK
  • EIC
  • EMCORE
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  • NTE
  • P-TEC
  • WECO
  • Yamaha

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