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型号	功能描述	生产厂家企业	LOGO
HY628100A	128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used	HYNIX 海力士	HYNIX
HY628100AG	128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used	HYNIX 海力士	HYNIX
HY628100ALG	128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used	HYNIX 海力士	HYNIX
HY628100ALLG	128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used	HYNIX 海力士	HYNIX
HY628100ALLT1	128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used	HYNIX 海力士	HYNIX
HY628100ALT1	128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used	HYNIX 海力士	HYNIX
HY628100AT1	128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used	HYNIX 海力士	HYNIX
HY628100B	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100B-E	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100B-I	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100BLG	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100BLG-E	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100BLG-I	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100BLLG	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100BLLG-E	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100BLLG-I	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100BLLT1	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100BLLT1-E	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100BLLT1-I	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100BLT1	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100BLT1-E	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100BLT1-I	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100AG-70	128Kx8bit CMOS SRAM, standby current 1 mA, 70ns	HYNIX 海力士	HYNIX
HY628100ALG	128Kx8bit CMOS SRAM	HYNIX 海力士	HYNIX
HY628100B	128K x 8bit CMOS SRAM	HYNIX 海力士	HYNIX

HY628100产品属性

类型
描述
型号
HY628100
制造商
HYNIX
制造商全称
Hynix Semiconductor
功能描述
128Kx8bit CMOS SRAM

HY628100供应商更多...

更新时间：2026-3-18 13:43:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	HY628100AG-70	HYNIX	2023+	SOP32	50000	原装现货	询价
深圳市科芯源微电子有限公司	HY628100AG-10	SKHYNIX/海力士	2026+	SOP	54648	百分百原装现货实单必成欢迎询价	询价
洪芯国际半导体（深圳）有限公司	HY628100ALG-70	HYNIX	26+	原厂原封装	86720	全新原装正品价格最实惠假一赔百	询价
深圳市明嘉莱科技有限公司	HY628100AG-10	HYNIX/海力士	24+	SOP	990000	明嘉莱只做原装正品现货	询价
深圳市安富世纪电子有限公司	HY628100ALG-10	HYNIX/海力士	23+	SOP32	50000	全新原装正品现货,支持订货	询价
深圳市柯尔基电子有限公司	HY628100ALG-55	HYUNDAI	23+24	SOP-	9680	原盒原标.进口原装.支持实单 .价格优势	询价
深圳市美思瑞电子科技有限公司	HY628100ALG-70	HYNIX/海力士	22+	SOP32	12245	现货,原厂原装假一罚十!	询价
深圳市赛美科科技有限公司	HY628100ALG-70	HYNYX		SOP-32	56500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市华来深电子有限公司	HY628100ALG-70	HYUNDAI	23+	SOP	8560	受权代理!全新原装现货特价热卖!	询价
贸泽芯城（深圳）电子科技有限公司	HY628100AG-10	HYNIX/海力士	23+	SOP	3963	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价

HY628100芯片相关品牌

HY628100规格书下载地址

HY628100参数引脚图相关

HY628100数据表相关新闻

HY628400LG-70
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2020-1-13
HY604808
HY604808，全新原装当天发货或门市自取0755-82732291.
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DdatasheetPDF页码索引

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找IC，尽在114IC

HY628100产品属性

HY628100供应商更多...

HY628100芯片相关品牌

HY628100规格书下载地址

HY628100参数引脚图相关

HY628100数据表相关新闻

HY628400LG-70

HY628100A，HY628100ALG-70，HY628100B，HY628100BLLG55

HY604808

HY681690

HY57V561620FTP-HI公司原装正品现货/随时可以发货

HY57V641620ETP-6公司原装正品现货/随时可以发货

DdatasheetPDF页码索引