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型号	功能描述	生产厂家企业	LOGO
HY628100A	128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used	HYNIX 海力士	HYNIX
HY628100AG	128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used	HYNIX 海力士	HYNIX
HY628100ALG	128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used	HYNIX 海力士	HYNIX
HY628100ALLG	128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used	HYNIX 海力士	HYNIX
HY628100ALLT1	128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used	HYNIX 海力士	HYNIX
HY628100ALT1	128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used	HYNIX 海力士	HYNIX
HY628100AT1	128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used	HYNIX 海力士	HYNIX
HY628100B	128K x 8bit CMOS SRAM DESCRIPTION\nThe HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high d ● Fully static operation and Tri-state output\n● TTL compatible inputs and outputs\n● Battery backup(L/LL-part)\n -. 2.0V(min) data retention\n● Standard pin configuration\n -. 32pin SOP - 525mil\n -. 32pin TSOPI - 8X20(Standard);	HYNIX 海力士	HYNIX
HY628100B	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100B-E	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100B-I	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100BLG	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100BLG-E	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100BLG-I	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100BLLG	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100BLLG-E	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100BLLG-I	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100BLLT1	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100BLLT1-E	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100BLLT1-I	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100BLT1	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100BLT1-E	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100BLT1-I	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	HYNIX 海力士	HYNIX
HY628100AG-70	128Kx8bit CMOS SRAM, standby current 1 mA, 70ns	HYNIX 海力士	HYNIX
HY628100ALG	128Kx8bit CMOS SRAM	HYNIX 海力士	HYNIX

HY628100产品属性

类型
描述
型号
HY628100
制造商
HYNIX
制造商全称
Hynix Semiconductor
功能描述
128Kx8bit CMOS SRAM

HY628100供应商更多...

更新时间：2026-7-24 13:22:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科恒伟业电子有限公司	HY600651	HR	2450+		6540	只做原厂原装现货或订货假一赔十!	询价
深圳市安富世纪电子有限公司	HY600652	HanRun	23+	SOP6	50000	全新原装正品现货,支持订货	询价
贸泽芯城（深圳）电子科技有限公司	HY628100AG-10	HYNIX/海力士	23+	SOP	3963	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市凌旭科技有限公司	HY600651	HR	2016+	变压器	8850	只做原装,假一罚十,公司专营变压器,滤波器!	询价
深圳市创新迹电子有限公司	HY600652	HanRun	22+	SOP6	20000	公司只做原装品质保障	询价
深圳市宇创芯科技有限公司	HY600655	HANRUN	24+	CSOP16	9600	原装现货,优势供应,支持实单!	询价
洪芯国际半导体（深圳）有限公司	HY6006	HY	26+	TQFP100	86720	全新原装正品价格最实惠假一赔百	询价
深圳市一线半导体有限公司	HY6001P(FH16K14B)	HMC	24+	DIP14	7200		询价
深圳市毅创腾电子科技有限公司	HY6001P(FH16K14B)	HMC	23+	DIP/14	7000	绝对全新原装!100%保质量特价!请放心订购!	询价
深圳市宏捷佳电子科技有限公司	HY628100AG-70	HYNIX	2023+	SOP32	50000	原装现货	询价

HY628100芯片相关品牌

HY628100规格书下载地址

HY628100参数引脚图相关

HY628100数据表相关新闻

HY628400LG-70
www.jskj-ic.com
2021-9-9
HY628100A，HY628100ALG-70，HY628100B，HY628100BLLG55
HY628100A，HY628100ALG-70，HY628100B，HY628100BLLG55
2020-1-13
HY681690
HY681690，全新原装当天发货或门市自取0755-82732291.
2019-12-12
HY604808
HY604808，全新原装当天发货或门市自取0755-82732291.
2019-12-12
HY57V641620ETP-6公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-21
HY57V561620FTP-HI公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-21

DdatasheetPDF页码索引

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找IC，尽在114IC

HY628100产品属性

HY628100供应商更多...

HY628100芯片相关品牌

HY628100规格书下载地址

HY628100参数引脚图相关

HY628100数据表相关新闻

HY628400LG-70

HY628100A，HY628100ALG-70，HY628100B，HY628100BLLG55

HY681690

HY604808

HY57V641620ETP-6公司原装正品现货/随时可以发货

HY57V561620FTP-HI公司原装正品现货/随时可以发货

DdatasheetPDF页码索引