位置：首页 > IC中文资料第6190页 > HY57V658020B
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HY57V658020B | 4Banksx2Mx8BitSynchronousDRAM DESCRIPTION TheHynixHY57V658020Bisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V658020Bisorganizedas4banksof2,097,152x8. HY57V658020Bisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 |  |   |
8Mx8bitSynchronousDRAMSeries DESCRIPTION TheHY57V648010,HY57V648020,HY57V658010,HY57V658020,HY57V648011,HY57V648021,HY57V658011,HY57V658021arehighspeed3.3VSynchronousDRAMsandfabricatedwiththeHyundaiCMOSprocess.Eachbanksharesthesamechipinputsandoutputsbutcanbeindependentlyoperated.TheSynch | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx2Mx8BitSynchronousDRAM DESCRIPTION TheHynixHY57V658020Bisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V658020Bisorganizedas4banksof2,097,152x8. HY57V658020Bisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx2Mx8BitSynchronousDRAM DESCRIPTION TheHynixHY57V658020Bisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V658020Bisorganizedas4banksof2,097,152x8. HY57V658020Bisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx2Mx8BitSynchronousDRAM DESCRIPTION TheHynixHY57V658020Bisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V658020Bisorganizedas4banksof2,097,152x8. HY57V658020Bisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx2Mx8BitSynchronousDRAM DESCRIPTION TheHynixHY57V658020Bisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V658020Bisorganizedas4banksof2,097,152x8. HY57V658020Bisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx2Mx8BitSynchronousDRAM DESCRIPTION TheHynixHY57V658020Bisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V658020Bisorganizedas4banksof2,097,152x8. HY57V658020Bisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx2Mx8BitSynchronousDRAM DESCRIPTION TheHynixHY57V658020Bisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V658020Bisorganizedas4banksof2,097,152x8. HY57V658020Bisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx2Mx8BitSynchronousDRAM DESCRIPTION TheHynixHY57V658020Bisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V658020Bisorganizedas4banksof2,097,152x8. HY57V658020Bisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx2Mx8BitSynchronousDRAM DESCRIPTION TheHynixHY57V658020Bisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V658020Bisorganizedas4banksof2,097,152x8. HY57V658020Bisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx2Mx8BitSynchronousDRAM DESCRIPTION TheHynixHY57V658020Bisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V658020Bisorganizedas4banksof2,097,152x8. HY57V658020Bisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx2Mx8BitSynchronousDRAM DESCRIPTION TheHynixHY57V658020Bisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V658020Bisorganizedas4banksof2,097,152x8. HY57V658020Bisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | |
HY57V658020B产品属性
- 类型
描述
- 型号
HY57V658020B
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
4 Banks x 2M x 8Bit Synchronous DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HY |
20+ |
TSOP |
2860 |
原厂原装正品价格优惠公司现货欢迎查询 |
|||
HYNIX |
18+ |
TSOP |
30022 |
全新原装现货,可出样品,可开增值税发票 |
|||
HY |
2023+ |
TSOP |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
HY |
20+/21+ |
TSOP |
6786 |
全新原装现货优势产品 |
|||
ALI |
23+ |
QFP |
6500 |
全新原装假一赔十 |
|||
HYN |
23+ |
NA |
274 |
专做原装正品,假一罚百! |
|||
23+ |
N/A |
38460 |
正品授权货源可靠 |
||||
HYNIX |
22+ |
SOP |
5000 |
绝对进口原装现货 |
|||
HYUNDAI |
23+ |
TSOP |
4860 |
特价库存 |
|||
HYNIX |
23+ |
65480 |
HY57V658020B芯片相关品牌
HY57V658020B规格书下载地址
HY57V658020B参数引脚图相关
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- HY57V658020
- HY57V658011TC-8
- HY57V658011TC-7
- HY57V658011TC-10
- HY57V658011
- HY57V658010TC-15
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- HY57V658010TC-10
- HY57V658010
- HY57V654020BLTC-10
- HY57V654020BLTC
- HY57V654011TC-8
- HY57V654011TC-7
- HY57V654011TC-10
- HY57V654010TC-15
- HY57V654010TC-12
- HY57V654010TC-10
- HY57V65322OBTC6
- HY57V653220BTC-I
- HY57V653220BTC-8
- HY-5610
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HY57V658020B数据表相关新闻
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2019-4-21
DdatasheetPDF页码索引
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