4 Banks x 2M x 8Bit Synchronous DRAM

DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8. HY57V658020B is offering fully synchronous operation refere

4 Banks x 2M x 8Bit Synchronous DRAM

DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8. HY57V658020B is offering fully synchronous operation refere

4 Banks x 2M x 8Bit Synchronous DRAM

DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8. HY57V658020B is offering fully synchronous operation refere

4Mbit x 2 bank x 8 SDRAM, LVTTL, 100MHz