8Mx8 bit Synchronous DRAM Series

DESCRIPTION The HY57V648010, HY57V648020, HY57V658010, HY57V658020, HY57V648011, HY57V648021, HY57V658011, HY57V658021 are high speed 3.3V Synchronous DRAMs and fabricated with the Hyundai CMOS process. Each bank shares the same chip inputs and outputs but can be independently operated. The Synch

4 Banks x 2M x 8Bit Synchronous DRAM

DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8. HY57V658020B is offering fully synchronous operation refere

4 Banks x 2M x 8Bit Synchronous DRAM

DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8. HY57V658020B is offering fully synchronous operation refere

4 Banks x 2M x 8Bit Synchronous DRAM

DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8. HY57V658020B is offering fully synchronous operation refere

4 Banks x 2M x 8Bit Synchronous DRAM

DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8. HY57V658020B is offering fully synchronous operation refere

4 Banks x 2M x 8Bit Synchronous DRAM

DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8. HY57V658020B is offering fully synchronous operation refere

4 Banks x 2M x 8Bit Synchronous DRAM

DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8. HY57V658020B is offering fully synchronous operation refere

4 Banks x 2M x 8Bit Synchronous DRAM

DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8. HY57V658020B is offering fully synchronous operation refere

4 Banks x 2M x 8Bit Synchronous DRAM

DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8. HY57V658020B is offering fully synchronous operation refere

4 Banks x 2M x 8Bit Synchronous DRAM

DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8. HY57V658020B is offering fully synchronous operation refere

4 Banks x 2M x 8Bit Synchronous DRAM

DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8. HY57V658020B is offering fully synchronous operation refere

4 Banks x 2M x 8Bit Synchronous DRAM

DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8. HY57V658020B is offering fully synchronous operation refere

4 Banks x 2M x 8Bit Synchronous DRAM

4Mbit x 2 bank x 8 SDRAM, LVTTL, 100MHz