Silicon Epitaxial Trench Pin Diode for Antenna Switching

Features • Adopting the trench structure improves low capacitance. (C = 0.31 pF max) • Low forward resistance. (rf = 1.5 Ω max) • Low operation current. • Extremely small Flat Lead Package (EFP) is suitable for surface mount design.

Silicon Epitaxial Trench Pin Diode for Antenna Switching

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Diodes>Switching

Silicon Epitaxial Trench Pin Diode for Antenna Switching

Features • Adopting the trench structure improves low capacitance.(C = 0.31 pF max) • Low forward resistance. (rf = 1.5 Ω max) • Low operation current. • Thin Extremely small Flat Lead Package (TEFP) is suitable for surface mount design.

Silicon Epitaxial Trench Pin Diode for Antenna Switching

文件：56.6 Kbytes Page：5 Pages

Diodes>Switching

POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS

SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL147 have an applications specific state–of–the–art die designed for use in electric fluorescent lamp ballasts to 180 Watts and in Switchmode Power supplies for all types of electronic equipment. T

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP140,TIP141,TIP142 -->NPN TIP145,TIP146,TIP147 ---> PNP . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140,

POWER TRANSISTORS(10A,60-100V,125W)

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP

Wide Bandwidth Quad JFET Input Operational Amplifiers

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