Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A (Min.) • Industrial Use • Complement to TIP140T/141T/142T

SILICON PLANAR POWER DARLINGTON TRANSISTORS

SILICON PLANAR POWER DARLINGTON TRANSISTORS For use in Power Linear and Switching Applications

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP140/141/142

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Monolithic Darlington configuration ■

PNP Epitaxial Silicon Darlington Transistor

Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A (Min.) • Industrial Use • Complement to TIP140T/141T/142T

SILICON PLANAR POWER DARLINGTON TRANSISTORS

SILICON PLANAR POWER DARLINGTON TRANSISTORS For use in Power Linear and Switching Applications

封装/外壳：TO-220-3 包装：管件 描述：TRANS PNP DARL 100V 10A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP DARL 100V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

双极晶体管

达林顿管

互补硅功率达林顿晶体管

Silicon PNP transistor in a TO-220 Plastic Package.

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Monolithic Construction With Built In Base-Emitter Shunt Resistors

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Complementary power Darlington transistors

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isc Silicon PNP Darlington Power Transistor

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Silicon PNP Darlington Power Transistor

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SILICON PLANAR POWER DARLINGTON TRANSISTORS

SILICON PLANAR POWER DARLINGTON TRANSISTORS For use in Power Linear and Switching Applications

PNP Epitaxial Silicon Darlington Transistor

Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A (Min.) • Industrial Use • Complement to TIP140T/141T/142T

PNP Epitaxial Silicon Darlington Transistor

Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) • Industrial Use • Complement to TIP140/141/142

PNP Epitaxial Silicon Darlington Transistor

Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A (Min.) • Industrial Use • Complement to TIP140T/141T/142T

Radiation Hardened 10-to-4 Line Priority Encoder

Radiation Hardened 10-to-4 Line Priority Encoder These nine-input priority encoders accept data from nine active LOW inputs and provide a binary representation on the four active LOW outputs. A priority is assigned to each input so that when two or more inputs are simultaneously active, the

INTERCONNECT BATTERY HOLDERS

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Multi-size wire stripper & cutter - 5023

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Premier Supplier of Electronic Hardware

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