POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A (Min.) • Industrial Use • Complement to TIP140T/141T/142T

SILICON PLANAR POWER DARLINGTON TRANSISTORS

SILICON PLANAR POWER DARLINGTON TRANSISTORS For use in Power Linear and Switching Applications

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP140/141/142

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Monolithic Darlington configuration ■

SILICON PLANAR POWER DARLINGTON TRANSISTORS

SILICON PLANAR POWER DARLINGTON TRANSISTORS For use in Power Linear and Switching Applications

PNP Epitaxial Silicon Darlington Transistor

Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A (Min.) • Industrial Use • Complement to TIP140T/141T/142T

互补硅功率达林顿晶体管

The devices are manufactured in planar technology with \\\"base island\\\" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. • Monolithic Darlington configuration \n• Integrated antiparallel collector-emitter diode;

isc Silicon PNP Darlington Power Transistor

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封装/外壳：TO-220-3 包装：管件 描述：TRANS PNP DARL 100V 10A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP DARL 100V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

双极晶体管

达林顿管

Monolithic Construction With Built In Base-Emitter Shunt Resistors

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Silicon PNP transistor in a TO-220 Plastic Package.

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Silicon PNP Darlington Power Transistor

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Complementary power Darlington transistors

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SILICON PLANAR POWER DARLINGTON TRANSISTORS

SILICON PLANAR POWER DARLINGTON TRANSISTORS For use in Power Linear and Switching Applications

PNP Epitaxial Silicon Darlington Transistor

Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A (Min.) • Industrial Use • Complement to TIP140T/141T/142T

PNP Epitaxial Silicon Darlington Transistor

Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) • Industrial Use • Complement to TIP140/141/142

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP140,TIP141,TIP142 -->NPN TIP145,TIP146,TIP147 ---> PNP . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140,

POWER TRANSISTORS(10A,60-100V,125W)

POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS

SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL147 have an applications specific state–of–the–art die designed for use in electric fluorescent lamp ballasts to 180 Watts and in Switchmode Power supplies for all types of electronic equipment. T

Wide Bandwidth Quad JFET Input Operational Amplifiers

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