位置：首页 > IC中文资料第4127页 > HUFA75321D3S
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HUFA75321D3S | 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | FAIRCHILD 仙童半导体 |   | |
HUFA75321D3S | 55 V、20 A、30 mΩ、D2PAKN 沟道 UltraFET® | ONSEMI 安森美半导体 | | |
N-channel Enhancement Mode Power MOSFET Features VDS= 60V, ID= 30A RDS(ON) | BYCHIP 百域芯 | | ||
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | INTERSIL | | ||
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | FAIRCHILD 仙童半导体 | | ||
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | FAIRCHILD 仙童半导体 | | ||
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | INTERSIL | | ||
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | FAIRCHILD 仙童半导体 | |
HUFA75321D3S产品属性
- 类型
描述
- 型号
HUFA75321D3S
- 功能描述
MOSFET 20a 55V N-Channel UltraFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
TO-252AA |
11543 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
onsemi(安森美) |
25+ |
TO-252AA |
11543 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
FAIRCHILD/仙童 |
22+ |
DPAK |
100000 |
代理渠道/只做原装/可含税 |
|||
FAIRCHILD |
21+ |
TO252 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD/仙童 |
2450+ |
TO252 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
FAIRCHIL |
25+ |
TO-252 |
90000 |
一级代理商进口原装现货、价格合理 |
|||
HARRIS |
23+ |
TO252 |
65480 |
||||
FAIRCHILD |
24+ |
TO-252(DPAK) |
8866 |
||||
ONSEMI/安森美 |
2511 |
DPAK-3TO-252-3 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
FAIRCHILD |
10+ |
TO252 |
2512 |
HUFA75321D3S芯片相关品牌
HUFA75321D3S规格书下载地址
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HUFA75321D3S数据表相关新闻
HUFA76645S3ST
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2021-11-9HV111-浪涌限制器/断路器/热交换控制器IC
特点 无需外接部件 董事会80V，2A MOSFET 没有Rsense的需要 ± 8.0V至± 80V的输入电压范围 二级电流限制 1.2A初始浪涌电流极限 2.0A二浪涌电流极限/断路器触发伺服TOC限制1.2A，然后关闭 快速响应电流限制时，在输入电压过电流或步骤（如二极管OR'ing） UVLO /启用与上电复位监控电路 可编程欠压锁定 过电流保护 9.0sec自动重试 内置滞后热关机 80V漏
2013-1-6HV100-3针热插拔，浪涌电流限制器控制器
特点 33％，比SOT- 232的小型 通行证元素是唯一的外部部分 没有意义的电阻 自动适应*通元 短路保护* 紫外线和POR监控电路 2.5S自动重试 ±10V至±72V输入电压范围 0.6毫安典型工作电源电流 内置交流干扰路径打开钳 应用 - 48V局端交换（线卡） +48 V的服务器网络 +48 V的存储区域网络 +48 V的外围设备，路由器，交换机 +2
2013-1-6
DdatasheetPDF页码索引
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