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HUF75321D3S价格
参考价格：￥2.1146
型号：HUF75321D3ST 品牌：Fairchild 备注：这里有HUF75321D3S多少钱，2025年最近7天走势，今日出价，今日竞价，HUF75321D3S批发/采购报价，HUF75321D3S行情走势销售排行榜，HUF75321D3S报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HUF75321D3S | 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | |
HUF75321D3S | 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Intersil | | |
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Intersil | | ||
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 60V, ID= 30A RDS(ON) | Bychip 百域芯 | | ||
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
N-Channel 6 0-V (D-S) MOSFET 文件：988.87 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | |
HUF75321D3S产品属性
- 类型
描述
- 型号
HUF75321D3S
- 功能描述
MOSFET 20a 55V N-Channel UltraFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
32365 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FAIRCHILD/仙童 |
25+ |
TO-252 |
54648 |
百分百原装现货 实单必成 |
|||
FAIRCHILDRCHILD |
20+ |
SOT252 |
2000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ONSEMI/安森美 |
25+ |
TO252 |
20300 |
ONSEMI/安森美原装特价HUF75321D3ST即刻询购立享优惠#长期有货 |
|||
HARRIS |
21+ |
TO252 |
10000 |
原装现货假一罚十 |
|||
FAIRCHILD/仙童 |
1942+ |
TO-252 |
9852 |
只做原装正品现货或订货!假一赔十! |
|||
FAIRCHIL |
24+ |
TO-252 |
90000 |
一级代理商进口原装现货、价格合理 |
|||
ON/安森美 |
24+ |
TO-252 |
505348 |
免费送样原盒原包现货一手渠道联系 |
|||
VBsemi/台湾微碧 |
23+ |
TO/252 |
28000 |
原装正品 |
|||
FAIRCHILD |
25+23+ |
TO252 |
9072 |
绝对原装正品全新进口深圳现货 |
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HUF75321D3S规格书下载地址
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全新原装现货供应 0755-82538863 15820431872 QQ:1134344845
2019-2-23
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