HUF75321D3ST价格

参考价格:¥2.1146

型号:HUF75321D3ST 品牌:Fairchild 备注:这里有HUF75321D3ST多少钱,2025年最近7天走势,今日出价,今日竞价,HUF75321D3ST批发/采购报价,HUF75321D3ST行情走势销售排行榜,HUF75321D3ST报价。
型号 功能描述 生产厂家 企业 LOGO 操作
HUF75321D3ST

20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HUF75321D3ST

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

Bychip

百域芯

HUF75321D3ST

N-Channel 6 0-V (D-S) MOSFET

文件:988.87 Kbytes Page:6 Pages

VBSEMI

微碧半导体

20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

Intersil

20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

Intersil

HUF75321D3ST产品属性

  • 类型

    描述

  • 型号

    HUF75321D3ST

  • 功能描述

    MOSFET 20a 55V N-Channel UltraFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-9-30 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
TO252
7350
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24+
NA/
13249
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ON
20+
SMD
11520
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24+
TO252
880000
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TO-252
4500
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ONSEMI/安森美
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TO252
20300
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FAIRCHILD
14+
SOT-252
59
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON/安森美
25+
25000
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21+
SMD
30000
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ONSEMI/安森美
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!

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