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型号 功能描述 生产厂家 企业 LOGO 操作
HSMS-282M

Surface Mount RF Schottky Barrier Diodes

Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. Typical applications of these Schottky diodes are mixing, detectin

HP

安捷伦

HSMS-282M

Surface Mount RF Schottky Barrier

文件:505.68 Kbytes Page:15 Pages

AVAGO

安华高

HSMS-282M

Surface Mount RF Schottky Barrier Diodes

文件:1.47103 Mbytes Page:15 Pages

BOARDCOM

博通

Surface Mount RF Schottky Barrier Diodes

Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. Typical applications of these Schottky diodes are mixing, detectin

HP

安捷伦

Surface Mount RF Schottky Barrier Diodes

Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. Typical applications of these Schottky diodes are mixing, detectin

HP

安捷伦

Surface Mount RF Schottky Barrier Diodes

Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. Typical applications of these Schottky diodes are mixing, detectin

HP

安捷伦

Surface Mount RF Schottky Barrier Diodes

Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. Typical applications of these Schottky diodes are mixing, detectin

HP

安捷伦

Surface Mount RF Schottky Barrier Diodes

Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. Typical applications of these Schottky diodes are mixing, detectin

HP

安捷伦

Surface Mount RF Schottky Barrier Diodes

Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. Typical applications of these Schottky diodes are mixing, detectin

HP

安捷伦

Surface Mount RF Schottky Barrier Diodes

文件:209.75 Kbytes Page:14 Pages

HP

安捷伦

Surface Mount RF Schottky Barrier

文件:505.68 Kbytes Page:15 Pages

AVAGO

安华高

Surface Mount RF Schottky Barrier Diodes

文件:209.75 Kbytes Page:14 Pages

HP

安捷伦

封装/外壳:6-TSSOP,SC-88,SOT-363 包装:卷带(TR) 描述:RF DIODE SCHOTTKY 15V SOT363 分立半导体产品 二极管 - 射频

BOARDCOM

博通

Surface Mount RF Schottky Barrier

文件:505.68 Kbytes Page:15 Pages

AVAGO

安华高

Surface Mount RF Schottky Barrier Diodes

文件:209.75 Kbytes Page:14 Pages

HP

安捷伦

封装/外壳:6-TSSOP,SC-88,SOT-363 包装:卷带(TR) 描述:RF DIODE SCHOTTKY 15V SOT363 分立半导体产品 二极管 - 射频

BOARDCOM

博通

Surface Mount RF Schottky Barrier

文件:505.68 Kbytes Page:15 Pages

AVAGO

安华高

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

MOTOROLA

摩托罗拉

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

MOTOROLA

摩托罗拉

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

MOTOROLA

摩托罗拉

Silicon NPN Transistor Final RF Power Amp, Switch

Applications: • HF Power Amplifiers, Switchings • 27MHz, 4W, AM, Citizens Band Transmitter Output Stage

NTE

Round.Top View Type

文件:32.36 Kbytes Page:1 Pages

PANASONIC

松下

HSMS-282M产品属性

  • 类型

    描述

  • 型号

    HSMS-282M

  • 制造商

    AGILENT

  • 制造商全称

    AGILENT

  • 功能描述

    Surface Mount RF Schottky Barrier Diodes

更新时间:2026-3-18 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Broadcom Limited
25+
SOT-363
6843
样件支持,可原厂排单订货!
Broadcom Limited
25+
SOT-363
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
AVAGO/安华高
2450+
SOT363
6540
只做原装正品现货或订货!终端客户免费申请样品!
AGILENT
23+
SOT-363
60000
原厂授权一级代理,专业海外优势订货,价格优势、品种
AVAGO
16+
SOT-363
10000
进口原装现货/价格优势!
AVAGO
25+23+
SOT-363
43896
绝对原装正品现货,全新深圳原装进口现货
AVAGO
2005
SOT363
180
全新 发货1-2天
AVAGO
17+
SOT-363
6200
100%原装正品现货
Broadcom Limited
24+
6-TSSOP,SC-88,SOT-363
6000
只做原装,欢迎询价,量大价优
AVAGO/安华高
2511
SOT-323
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价

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