Surface Mount RF Schottky Barrier Diodes

Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. Typical applications of these Schottky diodes are mixing, detectin

RF 混频器/二极管检波器

HSMS-282x 系列的肖特基二极管是大多数应用的全方位最佳选择。这些产品具有低串联电阻、低正向电压，适应所有电流强度并体现良好的射频特性。应用范围包括钳位、低频混频器、偏置探测器，以及大信号零偏置探测器。VBR=15V，Ct=1.0pF，RD=10Ohm，Vf@1mA=340mV;

Surface Mount RF Schottky Barrier

文件：505.68 Kbytes Page：15 Pages

Surface Mount RF Schottky Barrier Diodes

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Surface Mount RF Schottky Barrier Diodes

Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. Typical applications of these Schottky diodes are mixing, detectin

Surface Mount RF Schottky Barrier Diodes

Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. Typical applications of these Schottky diodes are mixing, detectin

Surface Mount RF Schottky Barrier Diodes

Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. Typical applications of these Schottky diodes are mixing, detectin

Surface Mount RF Schottky Barrier Diodes

Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. Typical applications of these Schottky diodes are mixing, detectin

Surface Mount RF Schottky Barrier Diodes

Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. Typical applications of these Schottky diodes are mixing, detectin

Surface Mount RF Schottky Barrier Diodes

Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. Typical applications of these Schottky diodes are mixing, detectin

Surface Mount RF Schottky Barrier Diodes

文件：209.75 Kbytes Page：14 Pages

Surface Mount RF Schottky Barrier

文件：505.68 Kbytes Page：15 Pages

Surface Mount RF Schottky Barrier Diodes

文件：209.75 Kbytes Page：14 Pages

Surface Mount RF Schottky Barrier

文件：505.68 Kbytes Page：15 Pages

封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：RF DIODE SCHOTTKY 15V SOT323 分立半导体产品 二极管 - 射频

Surface Mount RF Schottky Barrier Diodes

文件：209.75 Kbytes Page：14 Pages

封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：RF DIODE SCHOTTKY 15V SOT323 分立半导体产品 二极管 - 射频

Surface Mount RF Schottky Barrier

文件：505.68 Kbytes Page：15 Pages

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

Silicon NPN Transistor Final RF Power Amp, Switch

Applications: • HF Power Amplifiers, Switchings • 27MHz, 4W, AM, Citizens Band Transmitter Output Stage

Round.Top View Type

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