Silicon Schottky Barrier Diode for System Protection

Features • HSM126S which is connected in series configuration enable to protect electric systems from missoperation against external + and – surge. • Low VF and low leakage current. • MPAK package is suitable for high density surface mounting and high speed assembly

Silicon Schottky Barrier Diode for System Protection

Features • HSM126S which is connected in series configuration enable to protect electric systems from missoperation against external + and – surge. • Low VF and low leakage current. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Silicon Schottky Barrier Diode for System Protection

Diodes>Switching

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switc

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POWER TRANSISTORS(5.0A,60-100V,65W)

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Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon NPN Phototransistor

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