| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Pre-power amplifier for headphone stereos The BA3612AKV is configured of a pre-amplifier and a headphone amplifier, and contains internal AMS, B.B, AVLS, and BEEP amplifier functions. Also, this IC can be used in combination with the BA3641FV to enable configuration of recording and playback sets. Features 1) Low current consumption. 2 | ROHM 罗姆 | |||
100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 3.4 A, 100 V. RDS(ON) = 120 mΩ @ VGS = 10 V RDS(ON) = 130 mΩ @ VGS = 6 V • Fast switchin | FAIRCHILD 仙童半导体 | |||
3V to 22V Input, 1A, Ultra-Low 5μA IQ Power Module in an LGA Package DESCRIPTION The MPM3612 is a synchronous, rectified, stepdown, switch-mode power module with built-in internal power MOSFETs and high light-load efficiency. The MPM3612 has an ultra-low 5μA quiescent current (IQ). The MPM3612 offers a very compact solution that can achieve up to 1A of conti | MPSIND 美国芯源 | |||
丝印代码:BNR;3V to 22V Input, 1A, Ultra-Low 5μA IQ Power Module in an LGA Package DESCRIPTION The MPM3612 is a synchronous, rectified, stepdown, switch-mode power module with built-in internal power MOSFETs and high light-load efficiency. The MPM3612 has an ultra-low 5μA quiescent current (IQ). The MPM3612 offers a very compact solution that can achieve up to 1A of conti | MPSIND 美国芯源 | |||
PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC OVERVOLTAGE PROTECTION FOR ERICSSON COMPONENTS LINE INTERFACE CIRCUITS description The R3612 is a dual forward-conducting buffered p-gate over voltage protector in a plastic DIP package. It is designed to protect the Ericsson Components PBA 3357/3 DCLIC (Dual Channel Complete Line Interface Circ | POINN |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MPS |
20+ |
QFN |
32000 |
MPS原装主营型号-可开原型号增税票 |
|||
MPS |
21+ |
QFN-20 |
1540 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MPS/美国芯源 |
21+ |
QFN20 |
1709 |
||||
MPS(美国芯源) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
MPS |
22+ |
QFN-20 |
30000 |
只做原装正品 |
|||
MPS/美国芯源 |
2450+ |
QFN20 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
MPS/美国芯源 |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
MPS(美国芯源) |
23+ |
N/A |
20000 |
||||
MPS |
25+ |
QFN20 |
30000 |
全新原装现货,价格优势 |
|||
MPS/美国芯源 |
25+ |
QFN20 |
880000 |
明嘉莱只做原装正品现货 |
HSDL3612规格书下载地址
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双抗辐射,非反相功率MOSFET驱动器 辐射硬化的Hs4424RH和HS -4424BRH是非相,双,单片高速MOSFET驱动器设计的高电流转换为TTL电平信号在电压高达18V的输出。这些设备的投入是TTL兼容,可我们的房协直接驱动,1825ARH脉宽调制器或我们的加勒比国家联盟/青蒿素和HCS/ HCTS会类型的逻辑器件。快速崛起时间和高电流输出允许非常快速控制高功率MOSFET栅极电容,像我们的抗辐射FS055,在高频率的应用。高电流输出减少功率损耗通过快速的MOSFET栅极充电和放电电容。输出级采用了低电压锁出电路,放进一个三态模式输出当电源电压下降为低于10V房协,4
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2013-1-28
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