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HSB2价格
参考价格：￥0.1040
型号：HSB2838 品牌：HITACHI 备注：这里有HSB2多少钱，2025年最近7天走势，今日出价，今日竞价，HSB2批发/采购报价，HSB2行情走势销售排行榜，HSB2报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon Schottky Barrier Diode Silicon Schottky Barrier Diode Features • Low reverse current, Low capacitance. • CMPAK Package is suitable for high density surface mounting and high speed assembly. | HitachiHitachi Semiconductor 日立日立公司 |   | ||
Silicon Schottky Barrier Diode for High Speed Switching Silicon Schottky Barrier Diode for High Speed Switching Features • Low reverse current, Low capacitance. • CMPAK package is suitable for high density surface mounting and high speed assembly. | RENESAS 瑞萨 | | ||
SILICON SCHOTTKY BARRIER DIODE Features • Low reverse current, Low capacitance. • CMPAK Package is suitable for high density surface mounting and high speed assembly. | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon Schottky Barrier Diode for High Speed Switching Features • Low reverse current, Low capacitance. • CMPAK package is suitable for high density surface mounting and high speed assembly. | RENESAS 瑞萨 | | ||
Silicon Schottky Barrier Diode for High Speed Switching Features • Low reverse current, Low capacitance. • CMPAK-4 Package is suitable for high density surface mounting and high speed assembly. | RENESAS 瑞萨 | | ||
Silicon Schottky Barrier Diode Features • Low reverse current, Low capacitance. • CMPAK-4 Package is suitable for high density surface mounting and high speed assembly. | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon Schottky Barrier Diode for Balanced Mixer Features • High forward current, Low capacitance. • HSB276AS which is interconnected in series configuration is designed for balanced mixer use. • CMPAK package is suitable for high density surface mounting and high speed assembly. | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon Schottky Barrier Diode for Balanced Mixer Features • High forward current, Low capacitance. • HSB276AS which is interconnected in series configuration is designed for balanced mixer use. • CMPAK package is suitable for high density surface mounting and high speed assembly. | RENESAS 瑞萨 | | ||
Silicon Schottky Barrier Diode Features • High forward current, Low capacitance. • HSB276AS which is interconnected in series configuration is designed for balanced mixer use. • CMPAK package is suitable for high density surface mounting and high speed assembly. | KEXIN 科信电子 | | ||
SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING Features • High forward current, Low capacitance. • CMPAK - 4 Package is suitable for high density surface mounting and high speed assembly. | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon Schottky Barrier Diode for High Speed Switching Features • High forward current, Low capacitance. • CMPAK-4 Package is suitable for high density surface mounting and high speed assembly. | RENESAS 瑞萨 | | ||
Silicon Schottky Barrier Diode for Balanced Mixer Features • High forward current, Low capacitance. • HSB276S which is interconnected in series configuration is designed for balanced mixer use. • CMPAK package is suitable for high density surface mounting and high speed assembly. | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon Schottky Barrier Diode for Detector and Mixer Features • High forward current, Low capacitance. • HSB276S which is interconnected in series configuration is designed for balanced mixer use. • CMPAK package is suitable for high density surface mounting and high speed assembly. | RENESAS 瑞萨 | | ||
Silicon Schottky Barrier Diode Features ● High forward current, Low capacitance. ● HSB276S which is interconnected in series configuration is designed for balanced mixer use. ● CMPAK package is suitable for high density surface mounting and high speed assembly. | KEXIN 科信电子 | | ||
Silicon Schottky Barrier Diode for High Speed Switching Features • Low forward voltage, Low capacitance. • CMPAK package is suitable for high density surface mounting and high speed assembly. | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon Schottky Barrier Diode for Detector Features • Low forward voltage, Low capacitance. • CMPAK package is suitable for high density surface mounting and high speed assembly. | RENESAS 瑞萨 | | ||
SPEAKER SOUND GENERATORS 文件：118.2 Kbytes Page：1 Pages | JLWORLD | | ||
Specification for other impedance is available upon request 文件：765.99 Kbytes Page：1 Pages | JLWORLD | | ||
Specification for other impedance is available upon request 文件：765.99 Kbytes Page：1 Pages | JLWORLD | | ||
SPEAKER SOUND GENERATORS 文件：80.48 Kbytes Page：1 Pages | JLWORLD | | ||
SPEAKER SOUND GENERATORS 文件：643.67 Kbytes Page：1 Pages | JLWORLD | | ||
SPEAKER SOUND GENERATORS 文件：57.3 Kbytes Page：1 Pages | JLWORLD | | ||
SCHOTTKY BARRIER RECTIFIERS 文件：139.6 Kbytes Page：3 Pages | HY 虹扬科技 | | ||
SPEAKER SOUND GENERATORS 文件：68.13 Kbytes Page：1 Pages | JLWORLD | | ||
SPEAKER SOUND GENERATORS 文件：68.13 Kbytes Page：1 Pages | JLWORLD | | ||
SPEAKER SOUND GENERATORS 文件：59.94 Kbytes Page：1 Pages | JLWORLD | | ||
萧特基二极管 | HY 虹扬科技 | | ||
Schottky Barrier Rectifiers | HSMC 华昕 | | ||
Schottky Barrier Rectifiers 文件：112.52 Kbytes Page：3 Pages | HSMC 华昕 | | ||
Oscillator | HELE 加高电子 | | ||
包装：散装 描述：HEAT SINK, BGA, 45 X 45 X 15 MM 风扇，热管理 热敏 - 散热器 | CUID | | ||
HEAT SINK 文件：367.99 Kbytes Page：3 Pages | CUI | | ||
Schottky Barrier Rectifiers 文件：112.52 Kbytes Page：3 Pages | HSMC 华昕 | | ||
包装：卷带（TR） 描述：HEAT SINK, BGA, 60 X 60 X 10 MM 风扇，热管理 热敏 - 散热器 | CUID | | ||
SPEAKER SOUND GENERATORS 文件：643.67 Kbytes Page：1 Pages | JLWORLD | | ||
SPEAKER SOUND GENERATORS 文件：76.42 Kbytes Page：1 Pages | JLWORLD | | ||
SPEAKER SOUND GENERATORS 文件：72.95 Kbytes Page：1 Pages | JLWORLD | | ||
SPEAKER SOUND GENERATORS 文件：77.25 Kbytes Page：1 Pages | JLWORLD | | ||
SPEAKER SOUND GENERATORS 文件：72.71 Kbytes Page：1 Pages | JLWORLD | | ||
Specification for other impedance is available upon request 文件：1.1254 Mbytes Page：1 Pages | JLWORLD | | ||
Specification for other impedance is available upon request 文件：1.1254 Mbytes Page：1 Pages | JLWORLD | | ||
Aluminium Housed Power Resistors 文件：175.7 Kbytes Page：4 Pages | MACOM | | ||
Aluminium Housed Power Resistors 文件：180.16 Kbytes Page：4 Pages | TEC 泰科电子 | | ||
Aluminium Housed Power Resistors 文件：175.7 Kbytes Page：4 Pages | MACOM | | ||
Aluminium Housed Power Resistors 文件：180.16 Kbytes Page：4 Pages | TEC 泰科电子 | | ||
Aluminium Housed Power Resistors 文件：175.7 Kbytes Page：4 Pages | MACOM | | ||
Aluminium Housed Power Resistors 文件：180.16 Kbytes Page：4 Pages | TEC 泰科电子 | | ||
Aluminium Housed Power Resistors 文件：175.7 Kbytes Page：4 Pages | MACOM | | ||
Aluminium Housed Power Resistors 文件：180.16 Kbytes Page：4 Pages | TEC 泰科电子 | | ||
Aluminium Housed Power Resistors 文件：175.7 Kbytes Page：4 Pages | MACOM | | ||
Aluminium Housed Power Resistors 文件：180.16 Kbytes Page：4 Pages | TEC 泰科电子 | | ||
SPEAKER SOUND GENERATORS 文件：643.67 Kbytes Page：1 Pages | JLWORLD | | ||
SPEAKER SOUND GENERATORS 文件：90.34 Kbytes Page：1 Pages | JLWORLD | | ||
SPEAKER SOUND GENERATORS 文件：146.64 Kbytes Page：1 Pages | JLWORLD | | ||
Specification for other impedance is available upon request 文件：1.16311 Mbytes Page：1 Pages | JLWORLD | | ||
Specification for other impedance is available upon request 文件：1.16311 Mbytes Page：1 Pages | JLWORLD | | ||
Silicon Epitaxial Planar Diode for High Speed Switching 文件：85.07 Kbytes Page：5 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Diode for High Speed Switching 文件：71.68 Kbytes Page：6 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Diode for High Speed Switching 文件：85.07 Kbytes Page：5 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Diode for High Speed Switching 文件：85.07 Kbytes Page：5 Pages | RENESAS 瑞萨 | |
HSB2产品属性
- 类型
描述
- 型号
HSB2
- 制造商
Thomas & Betts
- 功能描述
Heat Shrink Breakout Boot ST Polyolefin
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
22+ |
SC70-3 |
8000 |
原装正品支持实单 |
|||
RENESAS/瑞萨 |
22+ |
SOT-323 |
20000 |
只做原装 |
|||
IR |
23+ |
MODULE |
7000 |
||||
RENESAS/瑞萨 |
23+ |
SOT323 |
6500 |
专注配单,只做原装进口现货 |
|||
RENESAS/瑞萨 |
2450+ |
SOT323 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
RENESAS |
23+ |
NA |
70075 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
RENESAS/瑞萨 |
24+ |
NA/ |
2805 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
TDK-LAMBD |
24+ |
DIP |
500 |
TDK-LAMBDA电源专营现货原装正品专营 |
|||
HIT |
24+ |
SOT-323 |
33000 |
||||
HITACHI |
24+ |
SOT-323 |
90000 |
一级代理商进口原装现货、价格合理 |
HSB2规格书下载地址
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- HSB-24
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- HS-ASST-9
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- HSADC85
- HSA5R33J
- HSA5R22J
- HSA5R18J
- HSA53R3J
- HSA51K5J
- HSA5150RJ
- HSA5120RJ
- HSA510KJ
- HSA50R47J
- HSA50R33J
- HSA50R22J
- HSA50R15J
- HSA50R10J
- HSA50R01J
- HSA508R2J
- HSA508K2J
HSB2数据表相关新闻
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双抗辐射，非反相功率MOSFET驱动器 辐射硬化的Hs4424RH和HS -4424BRH是非相，双，单片高速MOSFET驱动器设计的高电流转换为TTL电平信号在电压高达18V的输出。这些设备的投入是TTL兼容，可我们的房协直接驱动，1825ARH脉宽调制器或我们的加勒比国家联盟/青蒿素和HCS/ HCTS会类型的逻辑器件。快速崛起时间和高电流输出允许非常快速控制高功率MOSFET栅极电容，像我们的抗辐射FS055，在高频率的应用。高电流输出减少功率损耗通过快速的MOSFET栅极充电和放电电容。输出级采用了低电压锁出电路，放进一个三态模式输出当电源电压下降为低于10V房协，4
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2013-1-28
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