Heat Shrink Tubing

Features •Semi-rigid, adhesive lined, polyolefin tubing •3:1 shrink ratio •Splash-resistant, moisture-resistant covering •Rugged protection against abrasion, vibration and flexing •Excellent strain relief and insulation of weak points •Operation temperature range : -45°C to +125°C •Minimum

Adhesive Lined Heat Shrink Tubing

Features: • Semi-rigid, adhesive lined, polyolefin tubing • 3:1 shrink ratio • Splash-resistant, moisture-resistant covering • Rugged protection against abrasion, vibration and flexing • Excellent strain relief and insulation of weak points • Operation temperature range : -55°C to 125°C

Heat Shrink Tubings HS100 Series

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Heat Shrink Tubing

Features •Semi-rigid, adhesive lined, polyolefin tubing •3:1 shrink ratio •Splash-resistant, moisture-resistant covering •Rugged protection against abrasion, vibration and flexing •Excellent strain relief and insulation of weak points •Operation temperature range : -45°C to +125°C •Minimum

Adhesive Lined Heat Shrink Tubing

Features: • Semi-rigid, adhesive lined, polyolefin tubing • 3:1 shrink ratio • Splash-resistant, moisture-resistant covering • Rugged protection against abrasion, vibration and flexing • Excellent strain relief and insulation of weak points • Operation temperature range : -55°C to 125°C

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV116 series is supplied in the SOT78 (TO220AB) conventional leaded package. The BYV116B series is supplied in the SOT404 surface mounting p

General Purpose Silicon Rectifier

Description: The NTE116 is a general purpose silicon rectifier in a DO–41 case designed for low power and switching applications.

Plastic Medium-Power Complementary Silicon Transistors

Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min)

POWER TRANSISTORS(2.0A,60-100V,50W)

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS