集成VCO 的小数N分频PLL，采用SMT封装，12.4 - 13.4 GHz

0.6 GHz 到 3.0 GHz、0.5 dB LSB、6 位硅数字步进衰减器

0.6 GHz to 3.0 GHz, 0.5 dB LSB, 6-Bit, Silicon Digital Step Attenuator

文件：284.57 Kbytes Page：13 Pages

0.6 GHz to 3.0 GHz, 0.5 dB LSB, 6-Bit, Silicon Digital Step Attenuator

文件：284.57 Kbytes Page：13 Pages

0.6 GHz to 3.0 GHz, 0.5 dB LSB, 6-Bit, Silicon Digital Step Attenuator

文件：284.57 Kbytes Page：13 Pages

封装/外壳：16-VFQFN 裸露焊盘，CSP 包装：盒 描述：CUSTOM 0.6-3.0GHZ, 6-BIT DIG ATT RF/IF，射频/中频和 RFID 衰减器

四频段 MMIC VCO 8.3 - 15.2 GHz

QUADBAND MMIC VCO

文件：463.36 Kbytes Page：10 Pages

封装/外壳：40-VFQFN 裸露焊盘，CSP 功能：VCO 包装：托盘 描述：DRT WIDEBAND VCO, MULTI-BAND RF/IF，射频/中频和 RFID RF 其它 IC 和模块

QUADBAND MMIC VCO

文件：463.36 Kbytes Page：10 Pages

FRACTIONAL-N SYNTHESIZER WITH INTEGRATED VCO, 12.4 - 13.4 GHz

文件：644.29 Kbytes Page：14 Pages

FRACTIONAL-N PLL WITH INTEGRATED VCO, 12.4 - 13.4 GHz

文件：1.23688 Mbytes Page：14 Pages

FRACTIONAL-N SYNTHESIZER WITH INTEGRATED VCO, 12.4 - 13.4 GHz

文件：778 Kbytes Page：14 Pages

FRACTIONAL-N PLL WITH INTEGRATED VCO

文件：1.09598 Mbytes Page：14 Pages

FRACTIONAL-N SYNTHESIZER WITH INTEGRATED VCO, 12.4 - 13.4 GHz

文件：778 Kbytes Page：14 Pages

FRACTIONAL-N PLL WITH INTEGRATED VCO, 12.4 - 13.4 GHz

文件：1.23688 Mbytes Page：14 Pages

POWER TRANSISTORS(8.0A,150-200V,60W)

Single Element Detector

Element size 1,5x1,5 Thermally compensated option Designed for Gas Analysis applications The LHi 807 pyroelectric infrared-detector series is specially designed for gas analysis and monitorring applications . It includes pyroelectric element with FET in source follower connection and is avaliab

Integrated Circuit TV Sound Channel, 1W

Description: The NTE807 is a complete 1Watt sound channel in a 16–Lead DIP type package and is ideally suited for use in small screen TV or mobile FM radios. This device operates from a single 14V supply and provides VCC/2 output tracking as well as greater than 20dB of ripple rejection. The NTE8

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)