GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 17 - 26 GHz

General Description The HMC517 chip is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifi er (LNA) which covers the 17 to 26 GHz frequency range. The HMC517 provides 19 dB of small signal gain, 2.2 dB of noise fi gure and has an output IP3 greater than +24 dBm. The chip can easily be integrat

GaAs PHEMT MMIC LOW NOISE AMPLIFIER

General Description The HMC517 chip is a high dynamic range GaAs pHEMT MMIC Low Noise Amplifier (LNA) which covers the 17 to 26 GHz frequency range. The HMC517 provides 19 dB of small signal gain, 2.2 dB of noise figure and has an output IP3 greater than +24 dBm. The chip can easily be integrated

Test Equipment and Sensors

General Description The HMC517 chip is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifi er (LNA) which covers the 17 to 26 GHz frequency range. The HMC517 provides 19 dB of small signal gain, 2.2 dB of noise fi gure and has an output IP3 greater than +24 dBm. The chip can easily be integrat

封装/外壳：模具 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF AMP VSAT 17GHZ-26GHZ DIE RF/IF，射频/中频和 RFID 射频放大器

GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 17 - 26 GHz

文件：246.62 Kbytes Page：6 Pages

GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 17 - 26 GHz

SMT PHEMT LOW NOISE AMPLIFIER

General Description The HMC517LC4 chip is a high dynamic range GaAs pHEMT MMIC Low Noise Amplifier (LNA) housed in a leadless “Pb free” RoHS compliant SMT package. The HMC517LC4 provides 19 dB of small signal gain, 2.5 dB of noise figure and has an output IP3 of +23 dBm. The P1dB output power of

SMT PHEMT LOW NOISE AMPLIFIER, 17 - 26 GHz

General Description The HMC517LC4 chip is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifi er (LNA) housed in a leadless “Pb free” RoHS compliant SMT package. The HMC517LC4 provides 19 dB of small signal gain, 2.5 dB of noise fi gure and has an output IP3 of +23 dBm. The P1dB output power o

GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 17 - 26 GHz

文件：246.62 Kbytes Page：6 Pages

低噪声放大器GaAs pHEMT MMIC，17 - 26 GHz

低噪声放大器，采用SMT封装，17 - 26 GHz

SMT PHEMT LOW NOISE AMPLIFIER, 17 - 26 GHz

文件：228.56 Kbytes Page：6 Pages

SMT PHEMT LOW NOISE AMPLIFIER, 17 - 26 GHz

文件：228.56 Kbytes Page：6 Pages

封装/外壳：24-TFQFN 裸露焊盘 包装：带 描述：IC RF AMP GP 17GHZ-26GHZ 24SMT RF/IF，射频/中频和 RFID 射频放大器

Darlington Transistors(NPN Silicon)

Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available*

NPN Darlington transistor

DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. PNP complement: BC516. FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • Very high DC current gain (min. 30000). APPLICATIONS • Where very high amplification is required.

IP Library: Wide Range ESR Capacitor, Low Noise, 100mA Low Dropout Voltage Regulator

IP Library: Wide Range ESR Capacitor, Low Noise, 100mA Low Dropout Voltage Regulator ■ AnyESR REGULATOR ■ VERY COMMON OUTPUT DECOUPLING CERAMIC CAPACITOR ■ LOW CONSUMPTION : 250µA FULL LOAD ■ VERY LOW NOISE : 30µV ■ VERY LOW DROPOUT VOLTAGE : 50mV ■ HIGH PSRR : 60dB ■ STANDBY AND POWER DOWN

Silicon High Voltage Plastic Rectifier for Industrial and Microwave Oven

Features: ● Controlled Avalanche Characteristic Combined with the Ability to Dissipate Reverse Power ● Low Forward Voltage Drop ● Typical IR less than 0.1µA ● High Overload Surge Capacity

N-CHANNEL POWER MOS TRANSISTORS

HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.