MMIC功率放大器SMT，3 - 4 GHz

GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz

General Description The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC power amplifi er which operates between 3 and 4 GHz. The amplifi er is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal perform

GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER

General Description The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC power amplifier which operates between 3 and 4 GHz. The amplifi er is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performa

GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER

General Description The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC power amplifier which operates between 3 and 4 GHz. The amplifi er is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performa

GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz

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GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz

文件：268.6 Kbytes Page：6 Pages

GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz

文件：214.91 Kbytes Page：6 Pages

GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz

文件：214.91 Kbytes Page：6 Pages

GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz

文件：214.91 Kbytes Page：6 Pages

GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz

文件：268.6 Kbytes Page：6 Pages

GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz

文件：214.91 Kbytes Page：6 Pages

GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz

文件：214.91 Kbytes Page：6 Pages

GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz

文件：214.91 Kbytes Page：6 Pages

封装/外壳：8-TSSOP，8-MSOP（0.118"，3.00mm 宽）裸露焊盘 包装：带 描述：IC RF AMP WLL 3GHZ-4GHZ 8MSOP RF/IF，射频/中频和 RFID 射频放大器

封装/外壳：8-TSSOP，8-MSOP（0.118"，3.00mm 宽）裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF AMP WLL 3GHZ-4GHZ 8MSOP RF/IF，射频/中频和 RFID 射频放大器

Socket terminal strip Screw connection, with raised base

The socket terminal strip 327-FU with raised base and a pitch of 14,5 mm is available in 1 to 12 pole design. The raised base extends the creepage distance to the ground which allows 600 V in accordance with UL and CSA regulations without an additional insulating base. One fixing hole is locat

Jumper Accessories

The jumper 327-J electrically bridges adjacent poles of series 326 and 327 terminals. It is available in 14 mm pitch with 2 to 12 poles. Just like the lead, it is connected to the clamping units. The jumper shell is insulated.

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ327 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance RDS(on) = 0.13 Ω TYP. (VGS = −10 V, ID = −2.0 A) RDS(on) = 0.21 Ω TYP. (VGS = −4 V, ID = −1.6 A) • Low Cis

Socket terminal strip Screw connection

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Crystal Clock Oscillators

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