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HMC282

GaAs MMIC LOW NOISE AMPLIFIER 36 - 40 GHz

General Description The HMC282 chip is a four stage GaAs MMIC Low Noise Amplifier (LNA) which covers the frequency range of 36 to 40 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (2.30 mm2) size. The chip utilizes a GaAs PHEMT process offering 26 dB gain f

HITTITE

HMC282

GaAs MMIC LOW NOISE AMPLIFIER, 36 - 40 GHz

General Description\nThe HMC282 chip is a four stage GaAs MMIC Low Noise Amplifier (LNA) which covers the frequency range of 36 to 40 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (2.30 mm2) size. The chip utilizes a GaAs PHEMT process offering 26 dB gain fro   Noise Figure: 3.5 dB\n  Stable Gain vs. Temperature: 26 dB ± 1.2 dB\n  Small Size: 1.11 mm x 2.07 mm\n \nTypical Applications\nThe HMC282 LNA is ideal for:\n   • Millimeterwave Point-to-Point Radios\n   • VSAT\n   • SATCOM;

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HMC282

GaAs MMIC LOW NOISE AMPLIFIER, 36 - 40 GHz

文件:153.26 Kbytes Page:6 Pages

HITTITE

GaAs MMIC LOW NOISE AMPLIFIER, 36 - 40 GHz

文件:153.26 Kbytes Page:6 Pages

HITTITE

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

MOTOROLA

摩托罗拉

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

MOTOROLA

摩托罗拉

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

MOTOROLA

摩托罗拉

Silicon NPN Transistor Final RF Power Amp, Switch

Applications: • HF Power Amplifiers, Switchings • 27MHz, 4W, AM, Citizens Band Transmitter Output Stage

NTE

Round.Top View Type

文件:32.36 Kbytes Page:1 Pages

PANASONIC

松下

HMC282产品属性

  • 类型

    描述

  • 型号

    HMC282

  • 制造商

    HITTITE

  • 制造商全称

    Hittite Microwave Corporation

  • 功能描述

    GaAs MMIC LOW NOISE AMPLIFIER 36 - 40 GHz

更新时间:2026-8-2 11:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITTITE
23+
10000
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HITTITE
25+
2789
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