GaAs MMIC LOW NOISE AMPLIFIER 36 - 40 GHz

General Description The HMC282 chip is a four stage GaAs MMIC Low Noise Amplifier (LNA) which covers the frequency range of 36 to 40 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (2.30 mm2) size. The chip utilizes a GaAs PHEMT process offering 26 dB gain f

GaAs MMIC LOW NOISE AMPLIFIER, 36 - 40 GHz

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GaAs MMIC LOW NOISE AMPLIFIER, 36 - 40 GHz

GaAs MMIC LOW NOISE AMPLIFIER, 36 - 40 GHz

文件：153.26 Kbytes Page：6 Pages

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

Silicon NPN Transistor Final RF Power Amp, Switch

Applications: • HF Power Amplifiers, Switchings • 27MHz, 4W, AM, Citizens Band Transmitter Output Stage

Round.Top View Type

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