位置:首页 > IC中文资料第5582页 > HM6264
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HM6264 | 64k SRAM (8-kword x 8-bit) Wide Temperature Range version Description The Hitachi HM6264BI is 64k-bit static RAM organized 8-kword × 8-bit. It realizes higher performance and low power consumption by 1.5 µm CMOS process technology. The device, packaged in 450 mil SOP (foot print pitch width), 600 mil plastic DIP, is available for high density mounting. | HitachiHitachi Semiconductor 日立日立公司 | ||
HM6264 | 64 k SRAM (8-kword x 8-bit) Description The Hitachi HM6264B is 64k-bit static RAM organized 8-kword × 8-bit. It realizes higher performance and low power consumption by 1.5 µm CMOS process technology. The device, packaged in 450 mil SOP (foot print pitch width), 600 mil plastic DIP, 300 mil plastic DIP, is available for h | HitachiHitachi Semiconductor 日立日立公司 | ||
HM6264 | 8192-word x 8-bit High Speed CMOS Static RAM
| HitachiHitachi Semiconductor 日立日立公司 | ||
HM6264 | 8192-word x 8-bit High Speed CMOS Static RAM | HitachiHitachi Semiconductor 日立日立公司 | ||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM
| HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 | |||
8192-word x 8-bit High Speed CMOS Static RAM Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim | HitachiHitachi Semiconductor 日立日立公司 |
HM6264产品属性
- 类型
描述
- 型号
HM6264
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
64 k SRAM(8-kword x 8-bit)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HMC |
24+ |
DIP28 |
7850 |
只做原装正品现货或订货假一赔十! |
|||
HD |
24+ |
NA/ |
20 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
HIT |
25+23+ |
SMD |
42106 |
绝对原装正品全新进口深圳现货 |
|||
HMC |
25+ |
DIP |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
HITACHI |
2025+ |
DIP28 |
4000 |
原装进口价格优 请找坤融电子! |
|||
A |
24+ |
DIP-28 |
5 |
||||
Hit |
25+ |
5 |
公司优势库存 热卖中!! |
||||
HITACHI/日立 |
24+ |
DIP28 |
999999 |
全新原装正品!现货库存!可开13点增值税发票 |
|||
HIN |
17+ |
DIP |
6200 |
100%原装正品现货 |
|||
RENESAS |
25+ |
1533 |
公司现货库存 |
HM6264规格书下载地址
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- HM6220
- HM6218
- HM6217
- HM6215
- HM6213
- HM6212
- HM6211
- HM6210
- HM6208L
- HM6208H
- HM6208
- HM6207
HM6264数据表相关新闻
HM658128ALFP
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HM50464P-12 十年IC,只做原装
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HM5905,全新原装当天发货或门市自取0755-82732291.
2020-3-27HM5116400CS6Z
HM5116400CS6Z
2019-11-1HMA121CR3-全间距微型扁平封装4针光耦合器
HMA121CR3-全间距微型扁平封装4针光耦合器 HMA124,HMA121系列和HMA2701系列由砷化镓红外发光二极管驱动在一个紧凑的4针微型扁平封装的硅光电晶体管。引线间距为2.54毫米。 HMAA2705由两个砷化镓红外发光二极管反向并联连接,驾驶一个单一的硅光电晶体管在一个紧凑的4针微型扁平封装。引线间距2.54毫米 应用 HMAA2705 •交流线路监控 •未知极性直流传感器 •电话线接收器 HMA121系列,HMA2701系列,HMA124
2012-11-7
DdatasheetPDF页码索引
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