型号 功能描述 生产厂家 企业 LOGO 操作
HM6264

64k SRAM (8-kword x 8-bit) Wide Temperature Range version

Description The Hitachi HM6264BI is 64k-bit static RAM organized 8-kword × 8-bit. It realizes higher performance and low power consumption by 1.5 µm CMOS process technology. The device, packaged in 450 mil SOP (foot print pitch width), 600 mil plastic DIP, is available for high density mounting.

HitachiHitachi Semiconductor

日立日立公司

HM6264

64 k SRAM (8-kword x 8-bit)

Description The Hitachi HM6264B is 64k-bit static RAM organized 8-kword × 8-bit. It realizes higher performance and low power consumption by 1.5 µm CMOS process technology. The device, packaged in 450 mil SOP (foot print pitch width), 600 mil plastic DIP, 300 mil plastic DIP, is available for h

HitachiHitachi Semiconductor

日立日立公司

HM6264

8192-word x 8-bit High Speed CMOS Static RAM

HitachiHitachi Semiconductor

日立日立公司

HM6264

8192-word x 8-bit High Speed CMOS Static RAM

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

HitachiHitachi Semiconductor

日立日立公司

HM6264产品属性

  • 类型

    描述

  • 型号

    HM6264

  • 制造商

    HITACHI

  • 制造商全称

    Hitachi Semiconductor

  • 功能描述

    64 k SRAM(8-kword x 8-bit)

更新时间:2025-11-23 21:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HMC
24+
DIP28
7850
只做原装正品现货或订货假一赔十!
HD
24+
NA/
20
优势代理渠道,原装正品,可全系列订货开增值税票
HIT
25+23+
SMD
42106
绝对原装正品全新进口深圳现货
HMC
25+
DIP
3200
全新原装、诚信经营、公司现货销售
HITACHI
2025+
DIP28
4000
原装进口价格优 请找坤融电子!
A
24+
DIP-28
5
Hit
25+
5
公司优势库存 热卖中!!
HITACHI/日立
24+
DIP28
999999
全新原装正品!现货库存!可开13点增值税发票
HIN
17+
DIP
6200
100%原装正品现货
RENESAS
25+
1533
公司现货库存

HM6264数据表相关新闻

  • HM658128ALFP

    www.jskj-ic.com

    2021-9-9
  • HM50464P-12十年IC,只做原装

    HM50464P-12 十年IC,只做原装

    2020-10-22
  • HMC1040LP3CE 射频放大器 贸泽微优势

    HMC1040LP3CE 射频放大器 贸泽微优势

    2020-10-16
  • HM5905

    HM5905,全新原装当天发货或门市自取0755-82732291.

    2020-3-27
  • HM5116400CS6Z

    HM5116400CS6Z

    2019-11-1
  • HMA121CR3-全间距微型扁平封装4针光耦合器

    HMA121CR3-全间距微型扁平封装4针光耦合器 HMA124,HMA121系列和HMA2701系列由砷化镓红外发光二极管驱动在一个紧凑的4针微型扁平封装的硅光电晶体管。引线间距为2.54毫米。 HMAA2705由两个砷化镓红外发光二极管反向并联连接,驾驶一个单一的硅光电晶体管在一个紧凑的4针微型扁平封装。引线间距2.54毫米 应用 HMAA2705 •交流线路监控 •未知极性直流传感器 •电话线接收器 HMA121系列,HMA2701系列,HMA124

    2012-11-7