位置：首页 > IC中文资料第6419页 > HM5117805
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HM5117805 | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 尔必达 |   | |
HM5117805 | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh | MICRON 美光 | | |
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 尔必达 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 尔必达 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 尔必达 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 尔必达 | | ||
16 M EDO DRAM (2-Mword × 8-bit) 2 k Refresh Description\nThe HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most\nadvanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 to be • Single 5 V (±10%)\n• Access time: 50 ns/60 ns/70 ns (max)\n• Power dissipation\n Active mode: 605 mW/550 mW/495 mW (max)\n Standby mode : 11 mW (max)\n : 0.83 mW (max) (L-version)\n• EDO page mode capability\n• Long refresh period\n 2048 refresh cycles : 3; | MICRON 美光 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 尔必达 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 尔必达 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 尔必达 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 尔必达 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 尔必达 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 尔必达 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 尔必达 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 尔必达 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 尔必达 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 尔必达 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 尔必达 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 尔必达 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 尔必达 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 尔必达 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 尔必达 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 尔必达 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 尔必达 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 尔必达 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 尔必达 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 尔必达 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh | MICRON 美光 | | ||
2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117805B is a 2,097,152-word x 8-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM5117805B achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal C | OKIOki Electric Cable Co.,Ltd 冲电线日本冲电线株式会社 | | ||
2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117805C is a 2,097,152-word x 8-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM5117805C achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal C | OKIOki Electric Cable Co.,Ltd 冲电线日本冲电线株式会社 | | ||
2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117805D is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5117805D achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal | OKIOki Electric Cable Co.,Ltd 冲电线日本冲电线株式会社 | | ||
2,097,152-Word 횞 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117805F is a 2,097,152-word ×8-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5117805F achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer | OKIOki Electric Cable Co.,Ltd 冲电线日本冲电线株式会社 | |
HM5117805产品属性
- 类型
描述
- 型号
HM5117805
- 制造商
ELPIDA
- 制造商全称
Elpida Memory
- 功能描述
16 M EDO DRAM(2-Mword X 8-bit) 2 k Refresh
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI/日立 |
最新 |
SOJ28 |
9850 |
公司现货全新原装假一罚十特价 |
|||
HITACHI/日立 |
23+ |
SOP |
50000 |
全新原装正品现货,支持订货 |
|||
HIT |
24+ |
SOP |
2000 |
全新原装深圳仓库现货有单必成 |
|||
HITACHI |
22+ |
SOJ28 |
20000 |
公司只做原装 品质保障 |
|||
HITACHI/日立 |
23+ |
SOJ28 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
HIT |
SOJ28 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
HIT |
20+ |
SOP |
2960 |
诚信交易大量库存现货 |
|||
HIT |
05+ |
原厂原装 |
5216 |
只做全新原装真实现货供应 |
|||
HITACHI/日立 |
2402+ |
SOJ28 |
8324 |
原装正品!实单价优! |
|||
AD |
25+ |
SOJ/28 |
3000 |
原盒原标,正品现货 诚信经营 价格美丽 假一罚十 |
HM5117805芯片相关品牌
HM5117805规格书下载地址
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