位置：首页 > IC中文资料第6419页 > HM5117805
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HM5117805 | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 美光科技 |   | |
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 美光科技 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 美光科技 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 美光科技 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 美光科技 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 美光科技 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 美光科技 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 美光科技 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 美光科技 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 美光科技 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 美光科技 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 美光科技 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 美光科技 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 美光科技 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 美光科技 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 美光科技 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 美光科技 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 美光科技 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 美光科技 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 美光科技 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 美光科技 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 美光科技 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 美光科技 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 美光科技 | | ||
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Description The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 | ELPIDA 美光科技 | | ||
2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO | OKIOki Electric Cable Co.,Ltd 冲电线日本冲电线株式会社 | | ||
2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117805B is a 2,097,152-word x 8-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM5117805B achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal C | OKIOki Electric Cable Co.,Ltd 冲电线日本冲电线株式会社 | | ||
2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117805C is a 2,097,152-word x 8-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM5117805C achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal C | OKIOki Electric Cable Co.,Ltd 冲电线日本冲电线株式会社 | | ||
2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117805D is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5117805D achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal | OKIOki Electric Cable Co.,Ltd 冲电线日本冲电线株式会社 | |
HM5117805产品属性
- 类型
描述
- 型号
HM5117805
- 制造商
ELPIDA
- 制造商全称
Elpida Memory
- 功能描述
16 M EDO DRAM(2-Mword X 8-bit) 2 k Refresh
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HD |
2023+ |
TSOP |
50000 |
原装现货 |
|||
HM |
23+ |
TSOP |
5000 |
专注配单,只做原装进口现货 |
|||
HM |
23+ |
TSOP |
5000 |
专注配单,只做原装进口现货 |
|||
HIT |
SOJ28 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
HITACHI/日立 |
2402+ |
SOJ28 |
8324 |
原装正品!实单价优! |
|||
HITACHI/日立 |
2118+ |
SOJ28 |
9850 |
公司现货全新原装假一罚十特价 |
|||
HIT |
24+ |
SOJ |
400 |
||||
HITACHI/日立 |
24+ |
SOJ |
8540 |
只做原装正品现货或订货假一赔十! |
|||
HITACHI/日立 |
24+ |
NA/ |
3283 |
原装现货,当天可交货,原型号开票 |
|||
HIT |
20+ |
SOP |
2960 |
诚信交易大量库存现货 |
HM5117805芯片相关品牌
HM5117805规格书下载地址
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