2K x 8 CMOS RAM

Description The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low power is further enhanced by the use of synchronous circuit techniques that keep the active (operating) power low, which

2K x 8 CMOS RAM

Features • Low Power Standby. . . . . . . . . . . . . . . . . . . 275μW Max • Low Power Operation . . . . . . . . . . . . . .55mW/MHz Max • Fast Access Time . . . . . . . . . . . . . . . . . 120/200ns Max • Industry Standard Pinout • Single Supply . . . . . . . . . . . . . . . . . . . . . . .

2K x 8 CMOS RAM

Description The HM-6516/883 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low power is further enhanced by the use of synchronous circuit techniques that keep the active (operating) power low, whic

2K x 8 Asynchronous CMOS Static RAM

Description The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle time and ease of use. Features • Fast Access Time . . . . . . . . . . . . . . . . . . 70/90ns M

2kx8 Asynchronous CMOS Static RAM

• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Fast Access Time . . . . . . . . . . . . . . . . . . . . 70/90ns Max • Low Standby Current . . . . . . . . . . . . . . . . . . . 50A Max • Low Operating Current. . . . .

2kx8 Asynchronous CMOS Static RAM

The HM-65162/883 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Renesas Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle time and ease of use. The pinout is the JEDEC 24 pin DIP, and 32 pad 8-bit wide standard which allows easy memory boa • This Circuit is Processed in Accordance to MIL-STD- 883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.\n• Fast Access Time 70/90ns Max\n• Low Standby Current 50µA Max\n• Low Operating Current 70mA Max\n• Data Retention at 2.0V 20µA Max\n• TTL Compatible Inputs and Outputs\n• JEDE;

2K x 8 Asynchronous CMOS Static RAM

Description The HM-65162/883 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle time and ease of use. The pinout is the JEDEC 24 pin DIP, and 32 pad 8-bit wide standard which allo

2K x 8 Asynchronous CMOS Static RAM

Description The HM-65162/883 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle time and ease of use. The pinout is the JEDEC 24 pin DIP, and 32 pad 8-bit wide standard which allo

2K x 8 Asynchronous CMOS Static RAM

Description The HM-65162/883 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle time and ease of use. The pinout is the JEDEC 24 pin DIP, and 32 pad 8-bit wide standard which allo

2kx8 Asynchronous CMOS Static RAM

• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Fast Access Time . . . . . . . . . . . . . . . . . . . . 70/90ns Max • Low Standby Current . . . . . . . . . . . . . . . . . . . 50A Max • Low Operating Current. . . . .

2K x 8 CMOS RAM

Description The HM-6516/883 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low power is further enhanced by the use of synchronous circuit techniques that keep the active (operating) power low, whic

2K x 8 CMOS RAM

Description The HM-6516/883 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low power is further enhanced by the use of synchronous circuit techniques that keep the active (operating) power low, whic

Two-Output Power Amplifier

Overview The LA6516 is a two-output power amplifier developed for use in both consumer and industrial equipment. Functions • High slew rate (1.0 V/µs) • High output current (IO max = 1.0 A) • Current limiter function • Wide operating voltage range (±2 to 18 V) • Supports single-voltage powe

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

PNP SILICON PLANAR EPITAXIAL TRANSISTORS MPS6516 thru MPS6519 are PNP siliocn planar epitaxial transistors designed for general purpose amplifier applications and for complementary circuitry.

SMPS PRIMARY IC

The Series STR-F6600 is specifically designed to satisfy the requirements for increased integration and reliability in off-line quasi-resonant flyback converters. The series incorporates a primary control and drive circuit with discrete avalanche-rated power MOSFETs. Covering the power range from

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free