位置：首页 > IC中文资料第3549页 > HGTP20N60B3
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTP20N60B3 | 40A,600V,UFSSeriesN-ChannelIGBTs TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.T | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
HGTP20N60B3 | 40A,600V,UFSSeriesN-ChannelIGBTs TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconduction lossofabipolartransistor | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | |
40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
40A,600V,UFSSeriesN-ChannelIGBTs TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.T | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
40A,600V,UFSSeriesN-ChannelIGBTs TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.T | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
40A,600V,UFSSeriesN-ChannelIGBTs TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconduction lossofabipolartransistor | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | |
HGTP20N60B3产品属性
- 类型
描述
- 型号
HGTP20N60B3
- 功能描述
IGBT 晶体管 TO-220
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HARRIS |
2020+ |
TO-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
FAIRCHILD |
21+ |
TO-220 |
56000 |
公司进口原装现货 批量特价支持 |
|||
HAR |
23+ |
65480 |
|||||
FAIRCHILD |
23+ |
TO-220 |
9526 |
||||
HARRIS |
96+ |
TO-220 |
2785 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HARRIS/哈里斯 |
23+ |
NA/ |
6035 |
原装现货,当天可交货,原型号开票 |
|||
INTERSIL |
23+ |
TO-220 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
HAR |
22+23+ |
TO-220 |
15234 |
绝对原装正品全新进口深圳现货 |
|||
HARRIS |
TO-220 |
68900 |
原包原标签100%进口原装常备现货! |
||||
INTERSIL |
23+ |
TO-220 |
6000 |
原装正品，支持实单 |
HGTP20N60B3芯片相关品牌
HGTP20N60B3规格书下载地址
HGTP20N60B3参数引脚图相关
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- HGL34K
- HGL34J
- HGL34G
- HGL34D
- HGL34B
- HGL34A
- HGL341M
- HGL341K
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