位置：首页 > IC中文资料第897页 > HGTG40N60C3
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTG40N60C3 | 75A, 600V, UFS Series N-Channel IGBT 75A, 600V, UFS Series N-Channel IGBT The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much | FAIRCHILD 仙童半导体 |   | |
HGTG40N60C3 | 75A, 600V, UFS Series N-Channel IGBT 75A, 600V, UFS Series N-Channel IGBT The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lo | INTERSIL | | |
HGTG40N60C3 | 75A, 600V, UFS Series N-Channel IGBT | RENESAS 瑞萨 | | |
HGTG40N60C3 | 75A, 600V, UFS Series N-Channel IGBT | ONSEMI 安森美半导体 | |
HGTG40N60C3产品属性
- 类型
描述
- 型号
HGTG40N60C3
- 功能描述
IGBT 晶体管
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTERSIL |
20+ |
TO-247 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
FSC |
02+ |
TO-247 |
1634 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Fairchi |
24+ |
TO247 |
6000 |
进口原装正品假一赔十,货期7-10天 |
|||
FAI |
23+ |
65480 |
|||||
FAIRCHILD |
26+ |
TO-247 |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
FSC |
22+ |
TO-247 |
20000 |
公司只做原装 品质保障 |
|||
ON/安森美 |
21+ |
SMD |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
FAIRCHILD/仙童 |
25+ |
TO-247 |
30000 |
全新原装现货,价格优势 |
|||
Intersil |
24+ |
TO-247 |
8866 |
HGTG40N60C3规格书下载地址
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