600V, SMPS Series N-Channel IGBT with

The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderat

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

N-Channel IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.6V@IC= 30A · High Current Capability · High Input Impedance · Low Conduction Loss APPLICATIONS · Synchronous Rectification in SMPS · Motor Drives · UPS,PFC · General purpose inverter

600V，SMPS IGBT

HGTG30N60A4D 是一个 MOS 门极高电压开关器件，组合了 MOSFET 和双极晶体管的最佳特性。此器件具有 MOSFET 的高输入阻抗，以及双极晶体管的低导通状态损耗。低得多的导通状态电压降在 25°C 和 150°C 之间仅存在少量变化。使用的 IGBT 是开发型 TA49343。防并联中使用的二极管是开发型 TA49373。此 IGBT 适用于低导通损耗至关重要的、在高频率下运行的多种高电压开关应用。此器件针对高频率开关模式电源进行了优化。之前的开发型号为 TA49345。 •100 kHz 运行（390 V、30 A）\n•200kHz运行（390V、18A）\n•600 V 开关 SOA 能力\n•典型下降时间。 . . . . . . . . . T_J = 125&°C时为60ns\n•低导通损耗\n•温度补偿式 SABER^™模型;

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 75A 463W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

600V, SMPS Series N-Channel IGBT

The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been

600V, SMPS Series N-Channel IGBT

The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

600V, SMPS Series N-Channel IGBT

The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel