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HGTG30N60A4D中文资料
HGTG30N60A4D数据手册规格书PDF详情
The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49343. The diode
used in anti-parallel is the development type TA49373.
Features
• >100kHz Operation At 390V, 30A
• 200kHz Operation At 390V, 18A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . . 60ns at TJ= 125°C
• Low Conduction Loss
• Temperature Compensating SABER™ Model www.fairchildsemi.com
HGTG30N60A4D产品属性
- 类型
描述
- 型号
HGTG30N60A4D
- 功能描述
IGBT 晶体管 600V N-Channel IGBT SMPS Series
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
TO-247-3 |
3580 |
原装现货/15年行业经验欢迎询价 |
|||
FAIRCHILD |
24+ |
TO-247 |
1526 |
全新原装环保 |
|||
FAIRCHILD |
22+ |
TO-247 |
5000 |
全新原装现货!自家库存! |
|||
FAIRCHILD/仙童 |
23+ |
TO-3P |
50000 |
全新原装正品现货,支持订货 |
|||
FAIRCHILD/仙童 |
22+ |
TO-247 |
12245 |
现货,原厂原装假一罚十! |
|||
onsemi(安森美) |
24+ |
TO-247 |
928 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ON/安森美 |
25+ |
TO-247 |
32360 |
ON/安森美全新特价HGTG30N60A4D即刻询购立享优惠#长期有货 |
|||
ON |
23+ |
TO-247 |
8000 |
原装正品,假一罚十 |
|||
ONSENI |
25+ |
NA |
1350 |
全新原装!优势库存热卖中! |
|||
FAIRCHIL |
24+ |
TO-247 |
5125 |
全新原装现货,欢迎询购!! |
HGTG30N60A4D 价格
参考价格：￥21.1335
HGTG30N60A4D 资料下载更多...
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FAIRCHILD相关芯片制造商
Datasheet数据表PDF页码索引
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