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HGTG30N60A4D中文资料
HGTG30N60A4D数据手册规格书PDF详情
The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49343. The diode
used in anti-parallel is the development type TA49373.
Features
• >100kHz Operation At 390V, 30A
• 200kHz Operation At 390V, 18A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . . 60ns at TJ= 125°C
• Low Conduction Loss
• Temperature Compensating SABER™ Model www.fairchildsemi.com
HGTG30N60A4D产品属性
- 类型
描述
- 型号
HGTG30N60A4D
- 功能描述
IGBT 晶体管 600V N-Channel IGBT SMPS Series
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
TO-247-3 |
3580 |
原装现货/15年行业经验欢迎询价 |
|||
FAIRCHILD |
22+ |
TO-247 |
5000 |
全新原装现货!自家库存! |
|||
FAIRCHILD |
16+ |
NA |
8800 |
原装现货,货真价优 |
|||
FAIRCHILD |
24+ |
TO-247 |
1526 |
全新原装环保 |
|||
Fairchild |
23+ |
NA |
6800 |
原装正品,力挺实单 |
|||
FAIRCHILD |
24+ |
TO-3P |
27500 |
原装正品,价格最低! |
|||
FAIRCHILD |
24+ |
SOT-4242&NBS |
6000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
FAIRCHILD/仙童 |
24+ |
TO-247 |
10743 |
||||
FAIRCHILDONSEMICONDUCTOR |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
Fairchild/ON |
23+ |
TO2473 |
7000 |
HGTG30N60A4D 价格
参考价格：￥21.1335
HGTG30N60A4D 资料下载更多...
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FAIRCHILD相关芯片制造商
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