位置：首页 > IC中文资料第1644页 > HGTG20N60B3D_Q
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
40A,600V,UFSSeriesN-ChannelIGBTs TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.T | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   | |
40A,600V,UFSSeriesN-ChannelIGBTs TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconduction lossofabipolartransistor | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | | |
40A,600V,UFSSeriesN-ChannelIGBTs TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.T | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
HGTG20N60B3D_Q产品属性
- 类型
描述
- 型号
HGTG20N60B3D_Q
- 功能描述
IGBT 晶体管 600V IGBT UFS N-Channel
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
23+ |
TO-247 |
1224 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
FSC |
2016+ |
TO-3P |
3900 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
FSC |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
FSC |
2020+ |
TO247 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
INTERSIL |
20+ |
TO-247 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
ON/安森美 |
24+ |
GBT-TO-247 |
860000 |
明嘉莱只做原装正品现货 |
|||
Fairchild/ON |
21+ |
TO247 |
13880 |
公司只售原装,支持实单 |
|||
FAIRCHILD/仙童 |
24+ |
TO247 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
onsemi(安森美) |
23+ |
TO2473 |
6000 |
诚信服务，绝对原装原盘 |
HGTG20N60B3D_Q芯片相关品牌
HGTG20N60B3D_Q规格书下载地址
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HGTG20N60B3D_Q数据表相关新闻
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