Description

The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25°C and +150°C.

Features

• 12A, 600V

• Latch Free Operation

• Typical Fall Time <500ns

• High Input Impedance

• Low Conduction Loss