位置：首页 > IC中文资料第2375页 > HGTD7N60C3S
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTD7N60C3S | 14A,600V,UFSSeriesN-ChannelIGBTs TheHGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvar | Intersil Intersil Corporation |  |   |
HGTD7N60C3S | 14A,600V,UFSSeriesN-ChannelIGBTs Description TheHGTD7N60C3,HGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlowe | HARRIS Harris Corporation |  | |
HGTD7N60C3S | 14A,600V,UFSSeriesN-ChannelIGBTs TheHGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvar | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
14A,600V,UFSSeriesN-ChannelIGBTs Description TheHGTD7N60C3,HGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlowe | HARRIS Harris Corporation | | | |
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：IGBT 600V 14A TO252AA 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes GeneralDescription TheHGTP7N60C3D,HGT1S7N60C3DSandHGT1S7N60C3DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes GeneralDescription TheHGTP7N60C3D,HGT1S7N60C3DSandHGT1S7N60C3DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes TheHGTP7N60C3DandHGT1S7N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop | Intersil Intersil Corporation | | | |
14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes 文件：547.54 Kbytes Page：9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
HGTD7N60C3S产品属性
- 类型
描述
- 型号
HGTD7N60C3S
- 制造商
Harris Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-252 |
2669 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
HARRIS |
24+ |
TO-252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
HARRIS |
97+ |
TO-252 |
259 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD/仙童 |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
INTERSIL |
24+ |
TO-252 |
6000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
HARRIS |
23+ |
TO-252 |
30000 |
代理全新原装现货,价格优势 |
|||
ON/安森美 |
21+ |
SMD |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
ON/安森美 |
24+ |
TO-252 |
505348 |
免费送样原盒原包现货一手渠道联系 |
HGTD7N60C3S芯片相关品牌
HGTD7N60C3S规格书下载地址
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HGTD7N60C3S数据表相关新闻
HGTG11N120CND绝对全新原装正品特价销售
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DdatasheetPDF页码索引
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