位置：首页 > IC中文资料第2375页 > HGTD7N60C3S
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTD7N60C3S | 14A,600V,UFSSeriesN-ChannelIGBTs TheHGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvar | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  |   |
HGTD7N60C3S | 14A,600V,UFSSeriesN-ChannelIGBTs Description TheHGTD7N60C3,HGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlowe | HARRIS HARRIS corporation |  | |
HGTD7N60C3S | 14A,600V,UFSSeriesN-ChannelIGBTs TheHGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvar | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
14A,600V,UFSSeriesN-ChannelIGBTs Description TheHGTD7N60C3,HGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlowe | HARRIS HARRIS corporation | | | |
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：IGBT 600V 14A TO252AA 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes GeneralDescription TheHGTP7N60C3D,HGT1S7N60C3DSandHGT1S7N60C3DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes GeneralDescription TheHGTP7N60C3D,HGT1S7N60C3DSandHGT1S7N60C3DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes TheHGTP7N60C3DandHGT1S7N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes 文件：547.54 Kbytes Page：9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
HGTD7N60C3S产品属性
- 类型
描述
- 型号
HGTD7N60C3S
- 制造商
Harris Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HARRIS |
2020+ |
TO-252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
FAIRCHILD/仙童 |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
ON/安森美 |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
FAIRCH |
23+ |
TO-252 |
9960 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
|||
HARRIS |
18+ |
TO-252 |
9862 |
全新原装现货/假一罚百! |
|||
HARRIS |
22+ |
TO-252 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
FAIRCHILD/仙童 |
23+ |
TO-252(DPAK) |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
HARRIS |
23+ |
TO-252 |
30000 |
代理全新原装现货,价格优势 |
|||
INTERSIL |
22+ |
TO-252 |
6000 |
全新原装品牌专营 |
HGTD7N60C3S芯片相关品牌
HGTD7N60C3S规格书下载地址
HGTD7N60C3S参数引脚图相关
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HGTD7N60C3S数据表相关新闻
HGTG11N120CND绝对全新原装正品特价销售
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DdatasheetPDF页码索引
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