10A, 400V and 500V N-Channel IGBTs

Description The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from

10A, 400V and 500V N-Channel IGBTs

Description\nThe HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low • 10A, 400V and 500V\n• VCE(ON) 2.5V Max.\n• TFALL ≤1.4µs\n• Low On-State Voltage\n• Fast Switching Speeds\n• High Input ImpedanceApplications\n• Power Supplies\n• Motor Drives\n• Protective Circuits;

10A, 400V and 500V N-Channel IGBTs

Description The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from

10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only mo