Description

The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits.

Features

• 10A, 400V and 500V

• VCE(ON) 2.5V Max.

• TFALL ≤1.4µs

• Low On-State Voltage

• Fast Switching Speeds

• High Input Impedance

Applications

• Power Supplies

• Motor Drives

• Protective Circuits