型号 功能描述 生产厂家 企业 LOGO 操作

14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode

The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

FAIRCHILD

仙童半导体

14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode

The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

INTERSIL

14A, 600V, UFS Series N-Channel IGBTs

The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state vo

INTERSIL

14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode

ONSEMI

安森美半导体

14A, 600V, UFS Series N-Channel IGBTs

RENESAS

瑞萨

HGT1S7N60B3产品属性

  • 类型

    描述

  • 型号

    HGT1S7N60B3

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

  • 制造商

    Harris Corporation

更新时间:2026-1-31 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
25+
I2PAK(TO-262)
22412
正规渠道,免费送样。支持账期,BOM一站式配齐
INTERSIL
25+
TO-263
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
Intersil
24+
TO-263
8866
仙童
TO-263
68500
一级代理 原装正品假一罚十价格优势长期供货
FSC
22+
TO-263
20000
公司只做原装 品质保障
Fairchild/ON
23+
TO263AB
7000
INTERSIL
23+
TO-263
6800
专注配单,只做原装进口现货
INTERSIL
2022+
TO-263
4750
原厂代理 终端免费提供样品
IR
23+
I-pak
69820
终端可以免费供样,支持BOM配单!
INTERSIL
23+
TO-263
32322
原厂授权一级代理,专业海外优势订货,价格优势、品种

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