位置：首页 > IC中文资料第3548页 > HGT1S12N60B3S
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HGT1S12N60B3S | 27A, 600V, UFS Series N-Channel IGBTs The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop | INTERSIL |   | |
HGT1S12N60B3S | 27A, 600V, UFS Series N-Channel IGBTs | RENESAS 瑞萨 | | |
27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately be | INTERSIL | |
HGT1S12N60B3S产品属性
- 类型
描述
- 型号
HGT1S12N60B3S
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
- 制造商
Harris Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HAR |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
FAIRCHILD |
25+23+ |
DIP |
30011 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
HAR |
23+ |
TO-263 |
9000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
HARRIS/哈里斯 |
2026+ |
TO-263 |
57488 |
百分百原装现货 实单必成 欢迎询价 |
|||
FAIRCHILD |
24+ |
DIP |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
FAIRCHILD/仙童 |
22+ |
DIP |
20000 |
只做原装 |
|||
HAR |
18+ |
TO-263 |
1400 |
||||
INTERSIL |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
INTERSIL |
05+ |
原厂原装 |
6852 |
只做全新原装真实现货供应 |
|||
FSC/ON |
23+ |
原包装原封□□ |
565 |
原装进口特价供应特价，原装元器件供应，支持开发样品更多详细咨询库存 |
HGT1S12N60B3S芯片相关品牌
HGT1S12N60B3S规格书下载地址
HGT1S12N60B3S参数引脚图相关
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HGT1S12N60B3S数据表相关新闻
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2020-11-13HHC67E-1H-12VDC
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2020-4-20HG4119/048-1Z11，HG51B218FS，HG52E24AFD，HG62E08R74FB，HG62E43R76FS，
HG4119/048-1Z11，HG51B218FS，HG52E24AFD，HG62E08R74FB，HG62E43R76FS，
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DdatasheetPDF页码索引
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