位置：首页 > IC中文资料第3548页 > HGT1S12N60B3S
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HGT1S12N60B3S | 27A, 600V, UFS Series N-Channel IGBTs The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop | Intersil |   | |
HGT1S12N60B3S | 27A, 600V, UFS Series N-Channel IGBTs | RENESAS 瑞萨 | | |
27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately be | Intersil | |
HGT1S12N60B3S产品属性
- 类型
描述
- 型号
HGT1S12N60B3S
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
- 制造商
Harris Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC/ON |
23+ |
原包装原封□□ |
565 |
原装进口特价供应特价，原装元器件供应，支持开发样品更多详细咨询库存 |
|||
FAIRCHILD |
25+ |
TO-220 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
HARRIS/哈里斯 |
25+ |
TO-263 |
32360 |
HARRIS/哈里斯全新特价HGT1S12N60B3S即刻询购立享优惠#长期有货 |
|||
HAR |
23+ |
TO-263 |
9000 |
原装正品假一罚百!可开增票! |
|||
HARRIS/哈里斯 |
24+ |
TO-263 |
60000 |
全新原装现货 |
|||
HAR |
23+ |
TO-263 |
9000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
FAIRCHILD |
19+ |
DIP |
20000 |
1000 |
|||
HARRIS/哈里斯 |
24+ |
TO-263 |
45000 |
只做全新原装进口现货 |
|||
FAIRCHILD/仙童 |
25+ |
DIP |
860000 |
明嘉莱只做原装正品现货 |
HGT1S12N60B3S芯片相关品牌
HGT1S12N60B3S规格书下载地址
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DdatasheetPDF页码索引
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