位置：首页 > IC中文资料第3548页 > HGT1S12N60B3S
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HGT1S12N60B3S | 27A, 600V, UFS Series N-Channel IGBTs The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop | Intersil |   | |
27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately be | Intersil | |
HGT1S12N60B3S产品属性
- 类型
描述
- 型号
HGT1S12N60B3S
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
- 制造商
Harris Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HAR |
24+ |
NA/ |
1400 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
HARRIS/哈里斯 |
25+ |
TO-263 |
32360 |
HARRIS/哈里斯全新特价HGT1S12N60B3S即刻询购立享优惠#长期有货 |
|||
HARRIS/哈里斯 |
25+ |
TO-263 |
57488 |
百分百原装现货 实单必成 欢迎询价 |
|||
FAIRCHILD/仙童 |
22+ |
TO-262 |
100000 |
代理渠道/只做原装/可含税 |
|||
FAIRCHILD |
24+ |
DIP |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
FSC/ON |
23+ |
原包装原封□□ |
565 |
原装进口特价供应特价，原装元器件供应，支持开发样品更多详细咨询库存 |
|||
FAIRCHILD |
18+ |
SOT-263 |
2000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD |
25+ |
TO-220 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
HARRIS/哈里斯 |
24+ |
TO-263 |
45000 |
只做全新原装进口现货 |
|||
HAR |
18+ |
TO-263 |
1400 |
HGT1S12N60B3S芯片相关品牌
HGT1S12N60B3S规格书下载地址
HGT1S12N60B3S参数引脚图相关
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HGT1S12N60B3S数据表相关新闻
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2020-11-25HGDESM021A
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2020-4-20HG4119/048-1Z11，HG51B218FS，HG52E24AFD，HG62E08R74FB，HG62E43R76FS，
HG4119/048-1Z11，HG51B218FS，HG52E24AFD，HG62E08R74FB，HG62E43R76FS，
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DdatasheetPDF页码索引
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