位置：首页 > IC中文资料 > HGN080N10S
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HGN080N10S | MOSFET | HUNTECK 恒泰柯半导体 |   | |
MOSFET | HUNTECK 恒泰柯半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The G080N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The G080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT080N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT080N10KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT080N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
冠坤电子 |
21+ |
5mm*11mm |
310 |
只做原装鄙视假货15118075546 |
|||
NK/南科功率 |
2025+ |
DFN5X6 |
986966 |
国产 |
|||
HAMOS/汉姆 |
23+ |
PDFN5060 |
30000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
HAMOS |
21+ |
DFN5X6 |
3336 |
原装 |
|||
HUNTECK |
ROHS/NEW. |
原封ORIGIANL |
30050 |
原装,元器件供应/半导体 |
|||
HUNTECK |
21+ |
DFN5*6 |
5000 |
完美替代AON6250 原盘原装 香港现货 |
|||
恒泰柯 |
两年内 |
NA |
190 |
实单价格可谈 |
HGN080N10S芯片相关品牌
HGN080N10S规格书下载地址
HGN080N10S参数引脚图相关
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DdatasheetPDF页码索引
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