位置：首页 > IC中文资料 > HGN035N10A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HGN035N10A | 100V SGT | HUNTECK 恒泰柯半导体 |   | |
N-Channel Enhancement Mode Power MOSFET Description The GT035N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT035N10MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT035N10Q uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The GT035N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel PowerTrench짰 MOSFET 100V, 214A, 3.5m廓 文件：291.96 Kbytes Page：9 Pages | Fairchild 仙童半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NK/南科功率 |
2025+ |
DFN5X6 |
986966 |
国产 |
|||
恒泰科 |
23+ |
DFN5*6 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
恒泰柯 |
两年内 |
NA |
12963 |
实单价格可谈 |
|||
HUNTECK/恒泰柯 |
24+ |
DFN5*6 |
10000 |
原装现货 |
HGN035N10A芯片相关品牌
HGN035N10A规格书下载地址
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2020-11-13HG4119/048-1Z11，HG51B218FS，HG52E24AFD，HG62E08R74FB，HG62E43R76FS，
HG4119/048-1Z11，HG51B218FS，HG52E24AFD，HG62E08R74FB，HG62E43R76FS，
2020-1-13
DdatasheetPDF页码索引
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