N 沟道，PowerTrench® MOSFET，100V，214A，3.5mΩ

此 N 沟道 MOSFET 采用飞兆半导体先进的 Power Trench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 •RDS(on) = 3.0mΩ （典型值）@ VGS = 10V, ID = 75A\n•快速开关速度\n•低栅极电荷，QG = 89nC（典型值）\n•高性能沟道技术可实现极低的 RDS(on)\n•高功率和高电流处理能力\n•符合 RoHS 标准;

N-Channel PowerTrench짰 MOSFET 100V, 214A, 3.5m廓

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丝印代码：GT035N10；N-Channel Enhancement Mode Power MOSFET

Description The GT035N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：GT035N10；N-Channel Enhancement Mode Power MOSFET

Description The GT035N10MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

丝印代码：GT035N10；N-Channel Enhancement Mode Power MOSFET

Description The GT035N10Q uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：GT035N10；N-Channel Enhancement Mode Power MOSFET

Description The GT035N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters