位置:首页 > IC中文资料第8486页 > HFE151
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HFE151 | Ceramic High Voltage Disc Capacitors, Class 2 文件:269.18 Kbytes Page:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | ||
Ceramic Singlelayer DC Disc Capacitors, 6 kVDC General Purpose FEATURES • High capacitance in small sizes • Low losses • Wide range of different lead styles • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Lighting ballasts • Switching power supplies • Bypassing, coupling and decoupling • D | VISHAYVishay Siliconix 威世威世科技公司 | |||
Ceramic High Voltage Disc Capacitors, Class 2 文件:259.839 Kbytes Page:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes) VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228 | PANJIT 強茂 | |||
N-CHANNEL BROADBAND RF POWER MOSFET The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast | MOTOROLA 摩托罗拉 | |||
N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 50 V: Output P | MOTOROLA 摩托罗拉 | |||
POWER TRANSISTORS(7A,300-400V,80W) NPN SILICON POWER DARLINGTON TRANSISTORS . . . designed for use in automotive ignition, switching and motor control applications. FEATURES: ● Collector−Emitter Sustaining Voltage: VCEO(sus) = 300V (Min) - TIP150 = 350V (Min) - TIP151 = 400V | MOSPEC 统懋 | |||
GaAs Infrared Light Emitting Diodes 文件:40.94 Kbytes Page:2 Pages | PANASONIC 松下 |
HFE151产品属性
- 类型
描述
- 型号
HFE151
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Ceramic High Voltage Disc Capacitors, Class 2
HFE151规格书下载地址
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- HFE102MBFTG0KR
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- HFE102
- HFE10-1/6-DST-L1 (257)
- HFE10-1/24-HST-L1(257)
- HFE10-1/12ZST-L2
- HFE10-1/12-HT-L2(257)
- HFE10-1/12-HT-L1(257)
- HFE10-1/12-HST-L2(257)
- HFE10-1/12-HST-L1
- HFE10-1/12-DST-L1 (257)
- HFE100D
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- HFDP68T
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- HFD630A
- HFD630
- HFD5N40
- HFD4-V
- HFD4N50
- HFD4-I
- HFD43
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- HFD41
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2021-2-14
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