Ultra High Frequency Transistor Arrays

The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibi

Ultra High Frequency Transistor Arrays

Features • NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz • NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130 • NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V • PNP transistor (fT) . . . . . . . . . . . . . . . .

Ultra High Frequency Transistor Arrays

Ultra High Frequency Transistor Arrays

文件：298.68 Kbytes Page：13 Pages

丝印代码：HFA3096BZ；Ultra High Frequency Transistor Arrays

The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibi

丝印代码：HFA3096BZ；Ultra High Frequency Transistor Arrays

Features • NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz • NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130 • NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V • PNP transistor (fT) . . . . . . . . . . . . . . . .

丝印代码：HFA3096BZ；Ultra High Frequency Transistor Arrays

Features • NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz • NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130 • NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V • PNP transistor (fT) . . . . . . . . . . . . . . . .

Ultra High Frequency Transistor Arrays

The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibi

Ultra High Frequency Transistor Arrays

文件：298.68 Kbytes Page：13 Pages

Ultra High Frequency Transistor Arrays

文件：298.68 Kbytes Page：13 Pages

NPN/PNP Transistor Arrays

Description The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors (two PNP and three NPN types) on a common substrate, which has a separate connection. Independent connections for each transistor permit max

NPN/PNP Transistor Arrays

Description The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors (two PNP and three NPN types) on a common substrate, which has a separate connection. Independent connections for each transistor permit max

NPN/PNP Transistor Arrays

Description The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors (two PNP and three NPN types) on a common substrate, which has a separate connection. Independent connections for each transistor permit max

Optoisolator Low LED Drive NPN Transistor Output

Description: The NTE3096 is a gallium arsenide, infrared emitting diode optically coupled to a silicon phototransistor in a 6–Lead DIP type package. This device is designed for applications requiring low LED drive current, high electrical isolation, small package size and low cost such as inter