位置：首页 > IC中文资料第3718页 > HERAF801G
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HERAF801G | Isolation 8.0 AMPS. Glass Passivated High Efficient Rectifiers 文件：67.12 Kbytes Page：2 Pages | TSC 台湾半导体 |   | |
HERAF801G | Isolated 8.0 AMPS. Glass Passivated High Efficient Rectifiers 文件：268.44 Kbytes Page：2 Pages | TSC 台湾半导体 | | |
HERAF801G | 8.0AMPS. Isolated Glass Passivated High Efficient Rectifiers 文件：205.93 Kbytes Page：2 Pages | TSC 台湾半导体 | | |
HERAF801G | 50ns, 8A, 50V, High Efficient Recovery Rectifier | TSC 台湾半导体 | | |
封装/外壳：TO-220-2 整包 包装：管件 描述：DIODE GEN PURP 50V 8A ITO220AC 分立半导体产品 二极管 - 整流器 - 单 | TSC 台湾半导体 | | ||
Isolated 8.0 AMPS. Glass Passivated High Efficient Rectifiers 文件：268.44 Kbytes Page：2 Pages | TSC 台湾半导体 | | ||
Isolated 8.0 AMPS. Glass Passivated High Efficient Rectifiers 文件：638.21 Kbytes Page：2 Pages | TSC 台湾半导体 | | ||
8.0AMPS. Isolated Glass Passivated High Efficient Rectifiers 文件：205.93 Kbytes Page：2 Pages | TSC 台湾半导体 | | ||
Plastic High Power Silicon NPN Transistor Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD801 is complementary with BD 798, 800, 802 | MOTOROLA 摩托罗拉 | | ||
POWER TRANSISTORS(4.0A,60-80V,40W) PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat | MOSPEC 统懋 | | ||
Integrated Circuit FM Stereo Demodulator Description: The NTE801 is a monolithic device in a 14–Lead DIP type package designed for use in solid–state stereo receivers. Features: Requires No Inductors Low External Part Count Only Oscillator Frequency Adjustment Necessary Integral Stereo/Monaural Switch 75mA Lamp Drivin | NTE | | ||
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead | NEC 瑞萨 | | ||
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead | NEC 瑞萨 | |
HERAF801G产品属性
- 类型
描述
- 型号
HERAF801G
- 功能描述
整流器 8.0 Amp 50 Volt 150 Amp IFSM
- RoHS
否
- 制造商
Vishay Semiconductors
- 产品
Standard Recovery Rectifiers
- 反向电压
100 V
- 恢复时间
1.2 us
- 正向连续电流
2 A
- 最大浪涌电流
35 A 反向电流
- IR
5 uA
- 安装风格
SMD/SMT
- 封装/箱体
DO-221AC
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TSC原装 |
25+23+ |
TO-220F |
23467 |
绝对原装正品全新进口深圳现货 |
|||
SR |
24+ |
TO-220 |
5450 |
||||
ISC/固电 |
23+ |
TO-220F-2 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
TSC/台湾半导体 |
23+ |
TO220F-2 |
50000 |
全新原装正品现货,支持订货 |
|||
TSC原装 |
24+ |
TO-220F |
30980 |
原装现货/放心购买 |
|||
TSC |
24+ |
TO-220F-2 |
20000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
TSC |
02+ |
999 |
全新 发货1-2天 |
||||
TSC原装 |
23+ |
TO-220F |
7300 |
专注配单,只做原装进口现货 |
|||
TSC/台湾半导体 |
24+ |
TO-220 |
60000 |
全新原装现货 |
|||
Taiwan Semiconductor Corporati |
25+ |
ITO-220AC |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
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2012-12-5
DdatasheetPDF页码索引
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